Electrical Characterization of Thermal-Annealed Very Thin Barium-Doped Titanium Silicon Oxide Prepared by Liquid-Phase Deposition

2006 ◽  
Vol 153 (10) ◽  
pp. G911
Author(s):  
Ming-Kwei Lee ◽  
Kuan-Wen Tung ◽  
Chia-Ming Yu ◽  
Hung-Chang Lee
Keyword(s):  
Liquid Phase ◽  
Silicon Oxide ◽  
Electrical Characterization ◽  
Liquid Phase Deposition ◽  
Titanium Silicon

Preparation and characterization of Au-dispersed TiO2 thin films by a liquid-phase deposition method

1996 ◽  
Vol 6 (12) ◽  
pp. 1879 ◽  
Author(s):  
Shigehito Deki ◽  
Yoshifumi Aoi ◽  
Hiroshi Yanagimoto ◽  
Katsuyuki Ishii ◽  
Kensuke Akamatsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Phase ◽  
Liquid Phase Deposition ◽  
Deposition Method ◽  
Tio2 Thin Films

Characterization of Thermally Annealed Fluorinated Silicon Dioxide Films Prepared by Liquid-Phase Deposition

2005 ◽  
Vol 44 (No. 6) ◽  
pp. L220-L223 ◽  
Author(s):  
Ming-Kwei Lee ◽  
Chung-Min Shih ◽  
Shu-Ming Chang ◽  
Hong-Chi Wang ◽  
Jung-Jie Huang
Keyword(s):  
Liquid Phase ◽  
Silicon Dioxide ◽  
Liquid Phase Deposition ◽  
Silicon Dioxide Films

Newly Developed Low-K and Low-Stress Fluorinated Silicon Oxide Utilizing Temperature-Difference Liquid-Phase Deposition Technology

1998 ◽  
Vol 511 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Yueh-Chuan Lee ◽  
Su-Chen Lee
Keyword(s):  
Liquid Phase ◽  
Temperature Difference ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Liquid Phase Deposition ◽  
High Concentration ◽  
Real Process ◽  
Fluorinated Silicon Oxide ◽  
Intermetal Dielectric ◽  
Low K

ABSTRACTTo meet the requirements of low-K and low-stress intermetal dielectric (IMD) for future ULSI devices, a novel temperature-difference liquid-phase deposition (TD-LPD) method is proposed. The deposition solution of supersaturated silicic acid with high concentration of fluorine can be achieved by raising deposition temperature larger than 15 °C from dissolution temperature (0 °C). Because fluorine atoms can easily be incorporated with the technique, TDLPD fluorine-doped SiO2 (FSG) exhibits low-K (∼3.4) and low-stress (∼40MPa) property. In this paper, to study the interaction between TD-LPD FSG and moisture, the FSG is annealed and moisture stressed repeatedly as in a real process. Since K is sensitive to moisture absorption, and the stress is sensitive to the dehydration reaction between Si-OH's, the both are monitored as indices. A feasible mechanism is proposed to explain the variation in K/stress during annealing and boiling cycles.

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