The Initial Growth Mechanism of Silicon Oxide by Liquid‐Phase Deposition

1994 ◽  
Vol 141 (11) ◽  
pp. 3214-3218 ◽  
Author(s):  
Jenq‐Shiuh Chou ◽  
Si‐Chen Lee
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Silicon Oxide ◽  
Initial Growth ◽  
Liquid Phase Deposition

Initial Growth Mechanism of Sm1+xBa2-xCu3Oy Film Prepared by Liquid Phase Epitaxy

1999 ◽  
pp. 745-748
Author(s):  
Akemi Hayashi ◽  
Kazuomi Kakimoto ◽  
Yuichi Ishida ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Initial growth mechanism of a/b‐axis oriented YBa2Cu3O7−y film prepared by liquid phase epitaxy

1996 ◽  
Vol 68 (14) ◽  
pp. 2002-2004 ◽  
Author(s):  
Tasuku Kitamura ◽  
Izumi Hirabayashi ◽  
Shoji Tanaka ◽  
Yoshihro Sugawara ◽  
Yuichi Ikuhara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Newly Developed Low-K and Low-Stress Fluorinated Silicon Oxide Utilizing Temperature-Difference Liquid-Phase Deposition Technology

1998 ◽  
Vol 511 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Yueh-Chuan Lee ◽  
Su-Chen Lee
Keyword(s):  
Liquid Phase ◽  
Temperature Difference ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Liquid Phase Deposition ◽  
High Concentration ◽  
Real Process ◽  
Fluorinated Silicon Oxide ◽  
Intermetal Dielectric ◽  
Low K

ABSTRACTTo meet the requirements of low-K and low-stress intermetal dielectric (IMD) for future ULSI devices, a novel temperature-difference liquid-phase deposition (TD-LPD) method is proposed. The deposition solution of supersaturated silicic acid with high concentration of fluorine can be achieved by raising deposition temperature larger than 15 °C from dissolution temperature (0 °C). Because fluorine atoms can easily be incorporated with the technique, TDLPD fluorine-doped SiO2 (FSG) exhibits low-K (∼3.4) and low-stress (∼40MPa) property. In this paper, to study the interaction between TD-LPD FSG and moisture, the FSG is annealed and moisture stressed repeatedly as in a real process. Since K is sensitive to moisture absorption, and the stress is sensitive to the dehydration reaction between Si-OH's, the both are monitored as indices. A feasible mechanism is proposed to explain the variation in K/stress during annealing and boiling cycles.

Surface modification of spin-on-glass film by liquid-phase deposition of fluorinated silicon oxide

2001 ◽  
Vol 392 (1) ◽  
pp. 107-112
Author(s):  
Tetsuya Homma ◽  
Hiroyasu Kondo ◽  
Kazuaki Inohara ◽  
Masahiro Nomoto ◽  
Masaya Sakamoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Liquid Phase ◽  
Silicon Oxide ◽  
Glass Film ◽  
Liquid Phase Deposition ◽  
Fluorinated Silicon Oxide
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