Frequency‐Resolved Admittance Measurements on InAlAs / InGaAs / InAlAs Single‐Quantum Wells to Determine the Conduction Band Offset and the Capture Coefficient

1993 ◽  
Vol 140 (5) ◽  
pp. 1492-1495 ◽  
Author(s):  
J. M. López‐Villegas ◽  
P. Roura ◽  
J. Bosch ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Band Offset ◽  
Single Quantum ◽  
Conduction Band Offset ◽  
Capture Coefficient

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

2011 ◽  
Vol 109 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. D. Singh ◽  
V. K. Dixit ◽  
Shailesh K. Khamari ◽  
Ravi Kumar ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Quantum States ◽  
Band Offset ◽  
Type Ii ◽  
Conduction Band Offset ◽  
Capacitance Voltage

Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

2012 ◽  
Vol 5 (9) ◽  
pp. 091001 ◽  
Author(s):  
Liwu Lu ◽  
Shichen Su ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Degang Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level ◽  
Spectroscopic Technique ◽  
Band Offset ◽  
Conduction Band Offset

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

InGaPN/GaP Lattice-Matched Single Quantum Wells on GaP (001) Grown by MOVPE

2008 ◽  
Vol 55-57 ◽  
pp. 821-824 ◽  
Author(s):  
D. Kaewket ◽  
S. Sanorpim ◽  
Sukkaneste Tungasmita ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Light Emission ◽  
Peak Position ◽  
Conduction Band Edge ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Conduction Band Offset ◽  
Lattice Matched

Highly luminescence lattice-matched InxGa1-xP1-yNy/GaP single quantum wells (SQWs) on GaP (001) substrates were successfully grown by metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction measurements established that the lattice-matched InxGa1-xP1-yNy/GaP SQWs with various In (x = 0.050, 0.080, 0.135) and N (y = 0.025, 0.048, 0.071) contents were realized with excellent crystal quality and fairly flat interfaces. The results of photoluminescence (PL) and PL-excitation (PLE) showed the strong visible light emission (yellow to red emission) from the SQWs. With increasing In and N contents, the PL peak position and the PLE absorption edge exhibited the red-shift to lower energy, indicating the lowering of the InGaPN conduction band edge. The conduction band offset (∆Ec) of the InGaAPN/GaP quantum structure was estimated to be as high as 270 to 480 meV, which depends on the In and N contents in the well. Our results demonstrate that this novel InGaPN/GaP SQW system appropriates for the fabrication of light-emitting and laser diodes.

scholarly journals Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress

AIP Advances ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 035312
Author(s):  
Hyojung Kim ◽  
Soonkon Kim ◽  
Jongmin Yoo ◽  
Changyong Oh ◽  
Bosung Kim ◽  
...  
Keyword(s):  
Conduction Band ◽  
Threshold Voltage ◽  
Band Offset ◽  
Positive Bias ◽  
Conduction Band Offset
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