Dilute III-V Nitride Semiconductors and Material Systems - Materials Science
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Springer Berlin Heidelberg

9783540745280, 9783540745297

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_14 ◽

2008 ◽

pp. 343-367 ◽

Cited By ~ 1

Author(s):

M. Güngerich ◽

P. J. Klar ◽

W. Heimbrodt ◽

G. Weiser ◽

A. Lindsay ◽

...

Keyword(s):

Band Structure ◽

Band Formation ◽

Electronic Band

Download Full-text

Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_18 ◽

2008 ◽

pp. 449-501 ◽

Cited By ~ 1

Author(s):

N. Tansu ◽

L. J. Mawst

Keyword(s):

Chemical Vapor Deposition ◽

Quantum Well ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Quantum Well Lasers ◽

Dilute Nitride ◽

Metalorganic Chemical

Download Full-text

Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_13 ◽

2008 ◽

pp. 317-341 ◽

Cited By ~ 2

Author(s):

B. Kunert ◽

K. Volz ◽

W. Stolz

Keyword(s):

Material System ◽

Laser Applications ◽

Si Substrates

Download Full-text

Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_17 ◽

2008 ◽

pp. 419-447

Author(s):

D. Alexandropoulos ◽

M. J. Adams ◽

J. Rorison

Keyword(s):

Optical Amplifiers ◽

Semiconductor Optical Amplifiers

Download Full-text

Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_8 ◽

2008 ◽

pp. 199-221

Author(s):

M. Herrera ◽

D. Gonzalez ◽

M. Hopkinson ◽

H. Y. Liu ◽

R. Garcia

Keyword(s):

Quantum Wells ◽

Growth Temperature ◽

Composition Fluctuations

Download Full-text

Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_6 ◽

2008 ◽

pp. 163-179 ◽

Cited By ~ 3

Author(s):

J. Misiewicz ◽

R. Kudrawiec ◽

M. Gladysiewicz ◽

J. S. Harris

Keyword(s):

Quantum Wells ◽

Effective Mass ◽

Conduction Band ◽

Band Offset ◽

Electron Effective Mass ◽

Conduction Band Offset

Download Full-text

Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_20 ◽

2008 ◽

pp. 525-561

Author(s):

S. Calvez ◽

N. Laurand

Keyword(s):

Optical Amplifiers ◽

Semiconductor Optical Amplifiers ◽

Dilute Nitrides ◽

Vertical Cavity

Download Full-text

Spin Dynamics in Dilute Nitride

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_11 ◽

2008 ◽

pp. 283-299 ◽

Cited By ~ 1

Author(s):

X. Marie ◽

D. Lagarde ◽

V. Kalevich ◽

T. Amand

Keyword(s):

Spin Dynamics ◽

Dilute Nitride

Download Full-text

Doping, Electrical Properties and Solar Cell Application of GaInNAs

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_15 ◽

2008 ◽

pp. 369-404 ◽

Cited By ~ 2

Author(s):

K. Volz ◽

W. Stolz ◽

J. Teubert ◽

P. J. Klar ◽

W. Heimbrodt ◽

...

Keyword(s):

Solar Cell ◽

Electrical Properties ◽

Solar Cell Application

Download Full-text

Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science ◽

10.1007/978-3-540-74529-7_16 ◽

2008 ◽

pp. 405-418

Author(s):

H. Yonezu

Keyword(s):

Integrated Circuit ◽

Si Substrate

Download Full-text

Dilute III-V Nitride Semiconductors and Material Systems - Materials ScienceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Berlin Heidelberg

Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP

Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition

Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates

Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers

Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells

Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues

Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides

Spin Dynamics in Dilute Nitride

Doping, Electrical Properties and Solar Cell Application of GaInNAs

Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III–V-N Alloy Layers Grown on Si Substrate

Dilute III-V Nitride Semiconductors and Material Systems - Materials Science
Latest Publications