High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy

1999 ◽  
Vol 74 (23) ◽  
pp. 3495-3497 ◽  
Author(s):  
J. R. Chang ◽  
Y. K. Su ◽  
C. L. Lin ◽  
K. M. Wu ◽  
Y. T. Lu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Band Offset ◽  
Multiple Quantum ◽  
Conduction Band Offset

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

2015 ◽  
Vol 106 (22) ◽  
pp. 222102 ◽  
Author(s):  
Kanako Shojiki ◽  
Jung-Hun Choi ◽  
Takuya Iwabuchi ◽  
Noritaka Usami ◽  
Tomoyuki Tanikawa ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Metastable Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phase Inclusion

InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy with mass transport

2000 ◽  
Vol 77 (11) ◽  
pp. 1638-1640 ◽  
Author(s):  
G. Pozina ◽  
J. P. Bergman ◽  
B. Monemar ◽  
M. Iwaya ◽  
S. Nitta ◽  
...  
Keyword(s):  
Mass Transport ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum
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