Optical characterization and evaluation of the conduction band offset for ZnCdSe∕ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy

2005 ◽  
Vol 23 (3) ◽  
pp. 1209 ◽  
Author(s):  
Mohammad Sohel ◽  
Xuecong Zhou ◽  
Hong Lu ◽  
M. Noemi Perez-Paz ◽  
Maria Tamargo ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Conduction Band ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Band Offset ◽  
Conduction Band Offset

Contactless electroreflectance of GaNyAs1−y/GaAs multi quantum wells: The conduction band offset and electron effective mass issues

2006 ◽  
Vol 138 (7) ◽  
pp. 365-370 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
J.A. Gupta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Conduction Band ◽  
Band Offset ◽  
Electron Effective Mass ◽  
Conduction Band Offset

Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells

2011 ◽  
Vol 109 (7) ◽  
pp. 073702 ◽  
Author(s):  
S. D. Singh ◽  
V. K. Dixit ◽  
Shailesh K. Khamari ◽  
Ravi Kumar ◽  
A. K. Srivastava ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Quantum States ◽  
Band Offset ◽  
Type Ii ◽  
Conduction Band Offset ◽  
Capacitance Voltage

High valence‐band offset of GaSbAs‐InAlAs quantum wells grown by molecular beam epitaxy

1992 ◽  
Vol 61 (19) ◽  
pp. 2317-2319 ◽  
Author(s):  
P. W. Yu ◽  
D. C. Reynolds ◽  
B. Jogai ◽  
J. Loehr ◽  
C. E. Stutz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Valence Band ◽  
Molecular Beam ◽  
Band Offset ◽  
Valence Band Offset ◽  
High Valence Band

Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique

2012 ◽  
Vol 5 (9) ◽  
pp. 091001 ◽  
Author(s):  
Liwu Lu ◽  
Shichen Su ◽  
Chi-Chung Ling ◽  
Shijie Xu ◽  
Degang Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Deep Level ◽  
Spectroscopic Technique ◽  
Band Offset ◽  
Conduction Band Offset

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Gas-Source Molecular Beam Epitaxy Growth and Characterization of GaNP/GaP Structures

2000 ◽  
Vol 618 ◽  
Author(s):  
H. P. Xin ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Conduction Band ◽  
Molecular Beam ◽  
Stokes Shift ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum ◽  
Gas Source ◽  
X Band ◽  
Peak Energy

ABSTRACTGaNP bulk layers with different N concentrations and GaN0.025P0.975/GaP multiple quantum wells (MQWs) with various well thicknesses were grown on (100) GaP substrates by gas-source molecular beam epitaxy with a RF nitrogen radical beam source. Using high-resolution X-ray rocking curves, photoluminescence (PL) and absorption measurements, we have shown that incorporation of N in GaNxP1−x, alloys (x ≥0.43%) leads to a direct bandgap behavior of GaNP, and yields strong room-temperature PL from the epilayers. A large Stokes shift of 200 meV is found between the PL peak energy and the absorption edge for the GaNP epilayers, indicating a very strong carrier localization. From the PL peaks of a series of GaN0.025P0.975/GaP MQWs with different well thicknesses grown at the same growth condition, a large conduction-band effective mass mc* − 0.9 me has been obtained for the GaN0.025P0.975alloy, indicating a mixing of Γ and X band wave functions in the conduction band

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