Endpoint Detection in Cu-CMP

2006 ◽  
Vol 153 (9) ◽  
pp. G830 ◽  
Author(s):  
S. Kondoju ◽  
C. Juncker ◽  
P. Lucas ◽  
S. Raghavan ◽  
P. Fischer ◽  
...  
Keyword(s):  
Endpoint Detection ◽  
Cu Cmp

Advanced Fringe Analysis Techniques in Circuit Edit

2006 ◽  
Author(s):  
R.K. Jain ◽  
T. Malik ◽  
T.R. Lundquist ◽  
C.-C. Tsao ◽  
W.J. Walecki
Keyword(s):  
Imaging System ◽  
Success Rates ◽  
Endpoint Detection ◽  
Fringe Analysis ◽  
Analysis Techniques ◽  
Aspect Ratios ◽  
Slope Correction ◽  
Trench Area ◽  
And Control ◽  
Thickness Measurements

Abstract Novel Fabry Perot [1] fringe analysis techniques for monitoring the etching process with a coaxial photon-ion column [2] in the Credence OptiFIB are reported. Presently the primary application of these techniques in circuit edit is in trenching either from the front side or from the backside of a device. Optical fringes are observed in reflection geometry through the imaging system when the trench floor is thin and semi-transparent. The observed fringes result from optical interference in the etalon formed between the trench floor (Si in the case of backside trenching) and the circuitry layer beyond the trench floor. In-situ real-time thickness measurements and slope correction techniques are proposed that improve endpoint detection and control planarity of the trench floor. For successful through silicon edits, reliable endpoint detection and co-planarity of a local trench is important. Reliable endpoint detection prevents milling through bulk silicon and damaging active circuitry. Uneven trench floor thickness results in premature endpoint detection with sufficient thickness remaining in only part of the trench area. Good co-planarity of the trench floor also minimizes variability in the aspect ratios of the edit holes, hence increasing success rates in circuit edit.

Peeling and delamination in Cu/SiLK™ process during Cu-CMP

2004 ◽  
Vol 462-463 ◽  
pp. 161-167 ◽  
Author(s):  
S. Balakumar ◽  
X.T. Chen ◽  
Y.W. Chen ◽  
T. Selvaraj ◽  
B.F. Lin ◽  
...  
Keyword(s):  
Cu Cmp

Holographic Lithography with Endpoint Detection of Resist Development

1993 ◽  
Vol 32 (Part 1, No. 7) ◽  
pp. 3321-3327
Author(s):  
Hiroaki Kawata ◽  
Nobuo Kasamatsu ◽  
Kenji Murata
Keyword(s):  
Holographic Lithography ◽  
Endpoint Detection

Optical spectral emission endpoint detection for passivation etch

2009 ◽  
Author(s):  
Yue Kok Hong Kenneth ◽  
Chin Chye Seng ◽  
Chin Tiong Tay ◽  
Se Kwang Leong James ◽  
Boon Kiat Goh
Keyword(s):  
Endpoint Detection ◽  
Spectral Emission

Acid colloidal silica slurry for Cu CMP

2004 ◽  
Vol 40 (1) ◽  
pp. 26
Author(s):  
Nam-Hoon Kim ◽  
Eui-Goo Chang
Keyword(s):  
Colloidal Silica ◽  
Silica Slurry ◽  
Cu Cmp

scholarly journals Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents

2009 ◽  
Vol 1157 ◽  
Author(s):  
Shantanu Tripathi ◽  
Fiona M. Doyle ◽  
David A. Dornfeld
Keyword(s):  
Electrochemical Impedance ◽  
Protective Film ◽  
Current Decay ◽  
Glycine Solution ◽  
Current Densities ◽  
Circuit Elements ◽  
Copper Cmp ◽  
Cu Cmp ◽  
Kinetics Of ◽  
Capacitive Charging

AbstractDuring copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents.Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.

Evaluating endpoint detection algorithms for isolated word from Malay parliamentary speech

2010 ◽  
Author(s):  
Noraini Seman ◽  
Zainab Abu Bakar ◽  
Nordin Abu Bakar ◽  
Haslizatul Fairuz Mohamed ◽  
Nur Atiqah Sia Abdullah ◽  
...  
Keyword(s):  
Endpoint Detection ◽  
Detection Algorithms ◽  
Isolated Word

scholarly journals Optical endpoint detection for plasma reduction of graphene oxide

AIP Advances ◽  
2013 ◽  
Vol 3 (3) ◽  
pp. 032121 ◽  
Author(s):  
MaengJun Kim ◽  
Yung Ho Kahng ◽  
Yong Jae Kim ◽  
T. Prem kumar ◽  
KwangMook Park ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Endpoint Detection ◽  
Plasma Reduction
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