Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

2007 ◽  
Vol 90 (23) ◽  
pp. 232904 ◽  
Author(s):  
Y. C. Chang ◽  
H. C. Chiu ◽  
Y. J. Lee ◽  
M. L. Huang ◽  
K. Y. Lee ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Electrical Characteristics

Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0-0.3)

2021 ◽  
Author(s):  
Woohui Lee ◽  
Changmin Lee ◽  
Jinyong Kim ◽  
Jehoon Lee ◽  
Deokjoon Eom ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Alloy Film ◽  
Electrical Characteristics

To understand the effect of H2S pre-annealing treatment on a Si1-xGex alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO2/Si1-xGex were studied while varying the Ge concentration (x value)...

Effects of N[sub 2] RPN on the Structural and Electrical Characteristics of Remote Plasma Atomic Layer-Deposited HfO[sub 2] Films

2006 ◽  
Vol 9 (3) ◽  
pp. F13 ◽  
Author(s):  
Jihoon Choi ◽  
Seokhoon Kim ◽  
Hyunseok Kang ◽  
Hyeongtag Jeon ◽  
Choelhwyi Bae
Keyword(s):  
Atomic Layer ◽  
Electrical Characteristics ◽  
Remote Plasma

scholarly journals Influence of Oxidant Gas of Atomic Layer Deposition on Electrical Characteristics of Al2O3 films

2018 ◽  
Vol 61 (5) ◽  
pp. 280-285 ◽  
Author(s):  
Toshihide NABATAME ◽  
Masayuki KIMURA ◽  
Kazuya YUGE ◽  
Mari INOUE ◽  
Naoki IKEDA ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Layer Deposition

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

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