Effects of Source/Drain Activation on Channel-Length for Excimer-Laser-Crystallized Poly-Si Thin-Film Transistors

2006 ◽  
Vol 9 (2) ◽  
pp. H8-H11 ◽  
Author(s):  
C.-L. Fan ◽  
T.-H. Yang
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Channel Length ◽  
Si Thin Film

Electrical Characteristics of Excimer-Laser-Annealed Poly-Si Thin-Film Transistors

2007 ◽  
Vol 51 (96) ◽  
pp. 241 ◽  
Author(s):  
Woo-Hyun LEE ◽  
Hyun-Mo KOO ◽  
Won-Ju CHO ◽  
Jongwan JUNG ◽  
Soon-Young OH ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Si Thin Film

Application of Self-Aligned Amorphous SI Thin-Film Transistors

1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
New Technology ◽  
Channel Length ◽  
Shift Register ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Si ◽  
Si Thin Film ◽  
Dynamic Shift

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.

High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate

1992 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Masayuki Higashimoto ◽  
Kyoutarou Nakamura ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Si Thin Film

Excimer laser processing fora-Si and poly-Si thin film transistors for imager applications

2000 ◽  
Vol 18 (4) ◽  
pp. 1823-1829 ◽  
Author(s):  
J. P. Lu ◽  
P. Mei ◽  
R. T. Fulks ◽  
J. Rahn ◽  
J. Ho ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Processing ◽  
Thin Film Transistors ◽  
Si Thin Film

High-Performance Poly-Si Thin Film Transistors Crystallized by Excimer Laser Irradiation with A-Si Spacer Structure

2005 ◽  
Vol 8 (1) ◽  
pp. G14 ◽  
Author(s):  
Ting-Kuo Chang ◽  
Ching-Wei Lin ◽  
Chun-Chien Tsai ◽  
Jian-Hao Lu ◽  
Bo-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
High Performance ◽  
Excimer Laser Irradiation ◽  
Si Thin Film
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