Diffusion of Ion‐Implanted B in High Concentration P‐ and As‐Doped Silicon

1975 ◽  
Vol 122 (9) ◽  
pp. 1241-1244 ◽  
Author(s):  
Richard B. Fair ◽  
Paul N. Pappas
Keyword(s):  
High Concentration ◽  
Doped Silicon ◽  
Ion Implanted

High‐Concentration Arsenic‐Doped Silicon Hydrogenated by Microwave Plasma

1998 ◽  
Vol 145 (3) ◽  
pp. 1026-1033 ◽  
Author(s):  
Katsuhiro Yokota ◽  
Kouichi Hosokawa ◽  
Kouichiro Terada ◽  
Kiyohito Hirai ◽  
Hiromichi Takano ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
High Concentration ◽  
Doped Silicon

In situ annealing of aluminum ion-implanted with molybdenum

1983 ◽  
Vol 41 ◽  
pp. 260-261
Author(s):  
J. Bentley ◽  
L. D. Stephenson ◽  
R. B. Benson ◽  
P. A. Parrish
Keyword(s):  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Naval Research ◽  
Dislocation Network ◽  
Dislocation Loops ◽  
High Concentration ◽  
Aluminum Ion ◽  
Ion Implanted

As part of an analytical electron microscopy study of aluminum ion-implanted with molybdenum, in situ annealing experiments have been performed to better understand the phase transformation mechanisms in material with a peak molybdenum content of approximately 11 at. % Mo. Ion implantations were performed at the Naval Research Laboratory on electropolished coupons 38 × 28 × 0.5 mm of 99.999% Al with 0.5 mm grain size. A dual energy implant schedule of 1.12 × 1020 ions/m2 at 50 keV. plus 1.24 × 1020 ions/m2 at 110 keV was employed. The TEM specimens were prepared by electrodischarge machining 3-mm diameter disks from the implanted coupons and backthinning by electropolishing. In situ annealing was performed in a Philips EM 400T/FEG with the use of a Philips single-tilt heating holder. Videotape recordings were made from the TEM fluorescent viewing screen in the tilted position.A high concentration of small dislocation loops and possibly a tangled dislocation network were present in the as-implanted material. No precipitates were observed; this is consistent with a supersaturated solid solution.

scholarly journals Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
N. Fukata ◽  
S. Fukuda ◽  
S. Sato ◽  
K. Ishioka ◽  
M. Kitajima ◽  
...  
Keyword(s):  
High Concentration ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Doped Silicon ◽  
Boron Complexes

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

2015 ◽  
Vol 242 ◽  
pp. 218-223
Author(s):  
Peng Dong ◽  
Xing Bo Liang ◽  
Da Xi Tian ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Enhancement Effect ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
The One

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma

1997 ◽  
Vol 36 (Part 1, No. 7A) ◽  
pp. 4355-4358
Author(s):  
Katsuhiro Yokota ◽  
Kouichi Hosokawa ◽  
Kouichiro Terada ◽  
Kiyohito Hirai ◽  
Hiromichi Takano ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Hydrogen Plasma ◽  
High Concentration ◽  
Doped Silicon

Hydrogen–boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

2006 ◽  
Vol 376-377 ◽  
pp. 85-88 ◽  
Author(s):  
N. Fukata ◽  
S. Fukuda ◽  
S. Sato ◽  
K. Ishioka ◽  
M. Kitajima ◽  
...  
Keyword(s):  
High Concentration ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Doped Silicon ◽  
Boron Complexes

Experimental Studies of Photoluminescence in Mn-Ion Implanted Silicon Rich Oxide Thin Film

2006 ◽  
Vol 910 ◽  
Author(s):  
Wei Pan ◽  
R.G. Dunn ◽  
M.S. Carroll ◽  
Y.Q. Wang
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Silicon Nanocrystals ◽  
Experimental Studies ◽  
Peak Temperature ◽  
Oxide Thin Film ◽  
Si Substrate ◽  
Doped Silicon ◽  
Ferromagnetic Ordering ◽  
Ion Implanted

AbstractIn this paper, we wish to report our preliminary experimental results from the photoluminescence (PL) studies in a Mn-ion implanted silicon-rich oxide (SRO) thin film. At 4 K, a broad PL peak, centered at ~ 1.2 eV, was observed. It is blue-shifted from the Si substrate peak at ~ 1.1 eV. The temperature (T) dependence of PL was carried out at zero magnetic (B) field and B = 0.5 Tesla, respectively, and showed quantitatively different behaviors. At B = 0, the PL intensity increases very slowly at low temperatures and reaches a maximal value at ~ 40 K. It then decreases as T is further increased. At B = 0.5 Tesla, the peak temperature (Tpeak), whether the intensity is maximal, moves to ~ 80-100 K, and the decreasing rate beyond Tpeak is much smaller than that at B = 0. We speculate that these two different behaviors might reveal, possibly, a ferromagnetic ordering in Mn-ion doped silicon nanocrystals.

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