New mechanism for diffusion of ion‐implanted boron in Si at high concentration

1989 ◽  
Vol 54 (9) ◽  
pp. 798-800 ◽  
Author(s):  
O. W. Holland
Keyword(s):  
High Concentration ◽  
Ion Implanted

In situ annealing of aluminum ion-implanted with molybdenum

1983 ◽  
Vol 41 ◽  
pp. 260-261
Author(s):  
J. Bentley ◽  
L. D. Stephenson ◽  
R. B. Benson ◽  
P. A. Parrish
Keyword(s):  
Analytical Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Naval Research ◽  
Dislocation Network ◽  
Dislocation Loops ◽  
High Concentration ◽  
Aluminum Ion ◽  
Ion Implanted

As part of an analytical electron microscopy study of aluminum ion-implanted with molybdenum, in situ annealing experiments have been performed to better understand the phase transformation mechanisms in material with a peak molybdenum content of approximately 11 at. % Mo. Ion implantations were performed at the Naval Research Laboratory on electropolished coupons 38 × 28 × 0.5 mm of 99.999% Al with 0.5 mm grain size. A dual energy implant schedule of 1.12 × 1020 ions/m2 at 50 keV. plus 1.24 × 1020 ions/m2 at 110 keV was employed. The TEM specimens were prepared by electrodischarge machining 3-mm diameter disks from the implanted coupons and backthinning by electropolishing. In situ annealing was performed in a Philips EM 400T/FEG with the use of a Philips single-tilt heating holder. Videotape recordings were made from the TEM fluorescent viewing screen in the tilted position.A high concentration of small dislocation loops and possibly a tangled dislocation network were present in the as-implanted material. No precipitates were observed; this is consistent with a supersaturated solid solution.

High concentration effects of ion implanted boron in silicon

1980 ◽  
Vol 22 (1) ◽  
pp. 35-38 ◽  
Author(s):  
H. Ryssel ◽  
K. Müller ◽  
K. Haberger ◽  
R. Henkelmann ◽  
F. Jahnel
Keyword(s):  
High Concentration ◽  
Concentration Effects ◽  
Ion Implanted

scholarly journals Removal of Ion-implanted Resists using High Concentration Wet Ozone

2012 ◽  
Vol 25 (4) ◽  
pp. 445-448 ◽  
Author(s):  
Yousuke Goto ◽  
Yukihiro Angata ◽  
Akihiko Kono ◽  
Naohisa Makihara ◽  
Kunihiko Koike ◽  
...  
Keyword(s):  
High Concentration ◽  
Ion Implanted

Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face

2018 ◽  
Vol 924 ◽  
pp. 409-412
Author(s):  
Milantha de Silva ◽  
Teruhisa Kawasaki ◽  
Shinichiro Kuroki
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Specific Contact Resistance ◽  
High Concentration ◽  
Low Resistance ◽  
Impurity Doped ◽  
Activation Annealing ◽  
Ion Implanted

Low-resistance Ohmic contact on n+4H-SiC C-face with Titanium was demonstrated. In a conventional NiSi Ohmic contat on n-type 4H-SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance becomes larger. For suppressing the carbon agglomeration, laser annealing and Ti metal were introduced to form both silicide and carbide. Ti (75 nm)/SiC and Ni (75 nm)/SiC Ohmic contacts were formed on backside C-face of high concentration impurity doped 4H-SiC substrates with and without activation annealing. Electrical properties were investigated after 40 nanoseconds pulse laser annealing in Ar ambient. As the result, the lowest specific contact resistance of 7.9×10-5Ωcm2was obtained in Ti (75 nm)/SiC sample in the case of ion implanted sample at 500°C and with activation annealing at a laser power of 2.2 J/cm2.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Cytomembrane Preservation in Tissue Dehydrated Only With Glutaraldehyde and Epon 812 Resin

1973 ◽  
Vol 31 ◽  
pp. 320-321
Author(s):  
Daniel C. Pease
Keyword(s):  
Diffraction Pattern ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Unpublished Study ◽  
X Ray ◽  
Sectioned Material

A previous study demonstrated that tissue could be successfully infiltrated with 50% glutaraldehyde, and then subsequently polymerized with urea to create an embedment which retained cytomembrane lipids in sectioned material. As a result, the 180-190 Å periodicity characteristic of fresh, mammalian myelin was preserved in sections, as was a brilliant birefringence, and the capacity to bind OsO4 vapor in the hydrophobic bilayers. An associated (unpublished) study, carried out in co-operation with Drs. C.K. Akers and D.F. Parsons, demonstrated that the high concentration of glutaraldehyde (and urea) did not significantly alter the X-ray diffraction pattern of aldehyde-fixed, myelin. Thus, by itself, 50% glutaraldehyde has little effect upon cytomembrane systems and can be used with confidence for the first stages of dehydration.

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