scholarly journals Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
N. Fukata ◽  
S. Fukuda ◽  
S. Sato ◽  
K. Ishioka ◽  
M. Kitajima ◽  
...  
Keyword(s):  
High Concentration ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Doped Silicon ◽  
Boron Complexes

Hydrogen–boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

2006 ◽  
Vol 376-377 ◽  
pp. 85-88 ◽  
Author(s):  
N. Fukata ◽  
S. Fukuda ◽  
S. Sato ◽  
K. Ishioka ◽  
M. Kitajima ◽  
...  
Keyword(s):  
High Concentration ◽  
Hydrogen Atoms ◽  
Boron Doped ◽  
Doped Silicon ◽  
Boron Complexes

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

scholarly journals Boron Influence on Defect Structure and Properties of Lithium Niobate Crystals

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 458
Author(s):  
Nikolay V. Sidorov ◽  
Natalia A. Teplyakova ◽  
Olga V. Makarova ◽  
Mikhail N. Palatnikov ◽  
Roman A. Titov ◽  
...  
Keyword(s):  
Lithium Niobate ◽  
Defect Structure ◽  
Photorefractive Effect ◽  
Ferroelectric Properties ◽  
High Concentration ◽  
Oh Groups ◽  
Boron Doped ◽  
Compositional Uniformity ◽  
Boron Dopant ◽  
Lithium Niobate Crystals

Defect structure of nominally pure lithium niobate crystals grown from a boron doped charge have been studied by Raman and optical spectroscopy, laser conoscopy, and photoinduced light scattering. An influence of boron dopant on optical uniformity, photoelectrical fields values, and band gap have been also studied by these methods in LiNbO3 crystals. Despite a high concentration of boron in the charge (up to 2 mol%), content in the crystal does not exceed 10−4 wt%. We have calculated that boron incorporates only into tetrahedral voids of crystal structure as a part of groups [BO3]3−, which changes O–O bonds lengths in O6 octahedra. At this oxygen–metal clusters MeO6 (Me: Li, Nb) change their polarizability. The clusters determine optically nonlinear and ferroelectric properties of a crystal. Chemical interactions in the system Li2O–Nb2O5–B2O3 have been considered. Boron, being an active element, structures lithium niobate melt, which significantly influences defect structure and physical properties of a crystal grown from such a melt. At the same time, amount of defects NbLi and concentration of OH groups in LiNbO3:B is close to that in stoichiometric crystals; photorefractive effect, optical, and compositional uniformity on the contrary is higher.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Dynamic characteristics of dislocations in highly boron-doped silicon

2001 ◽  
Vol 89 (10) ◽  
pp. 5788-5790 ◽  
Author(s):  
I. Yonenaga ◽  
T. Taishi ◽  
X. Huang ◽  
K. Hoshikawa
Keyword(s):  
Dynamic Characteristics ◽  
Boron Doped ◽  
Doped Silicon

Solution processed boron doped ZnO thin films: influence of different boron complexes

2018 ◽  
Vol 6 (3) ◽  
pp. 035903 ◽  
Author(s):  
Ahmet Tumbul ◽  
Ferhat Aslan ◽  
Songul Demirozu ◽  
Abdullah Goktas ◽  
Ahmet Kilic ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Solution Processed ◽  
Boron Doped ◽  
Boron Complexes ◽  
Doped Zno

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

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