Physicochemical Properties of Chemical Vapor‐Deposited Silicon Oxynitride from a SiH4 ‐  CO 2 ‐  NH 3 ‐  H 2 System

1978 ◽  
Vol 125 (1) ◽  
pp. 139-145 ◽  
Author(s):  
A. K. Gaind ◽  
E. W. Hearn
Keyword(s):  
Physicochemical Properties ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposited

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

Optical properties of plasma‐enhanced chemical vapor deposited silicon‐oxynitride films

1987 ◽  
Vol 62 (11) ◽  
pp. 4538-4544 ◽  
Author(s):  
Y. Cros ◽  
J. C. Rostaing ◽  
J. Peisner ◽  
G. Leveque ◽  
C. Ance
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposited

Intrinsic Stress of Pecvd Silicon Oxynitride Films Deposited in a Hot-Wall Reactor

1990 ◽  
Vol 188 ◽  
Author(s):  
K. Aite ◽  
R. Koekoek
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Silicon Oxynitride ◽  
Intrinsic Stress ◽  
Refractive Indices ◽  
Optimal Conditions ◽  
Annealing Temperatures ◽  
Chemical Vapor Deposited ◽  
Deposited Films

ABSTRACTPlasma enhanced chemical vapor deposited ( PECVD ) silicon oxynitride films with refractive indices varying from 1.65 to 1.85 have been deposited in a hot-wall reactor using a SiH4/NH3/N2O gas mixture. A systematic investigation of the variation of the intrinsic stress of the deposited films with the parameters of deposition and the properties of the films, has been carried out. Our results show that silicon oxynitride films deposited in optimal conditions can support annealing temperatures of 900°C without cracking. The mechanical stresses in the films were determined by the Newton's fringes technique and a surface profiler. The film thickness was measured by ellipsometry at a wavelength of 632.8 nm. Fourier transform infrared spectroscopy ( FTIR ) was used to measure the hydrogen content of the films. The composition of the silicon oxynitride films was determined by Auger electron spectroscopy ( AES ) and Rutherford backscattering spectrometry ( RBS ).

Sign in / Sign up

Export Citation Format

Share Document