Optical properties of plasma‐enhanced chemical vapor deposited silicon‐oxynitride films

1987 ◽  
Vol 62 (11) ◽  
pp. 4538-4544 ◽  
Author(s):  
Y. Cros ◽  
J. C. Rostaing ◽  
J. Peisner ◽  
G. Leveque ◽  
C. Ance
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposited

Atomic Structure and Optical Properties of Plasma Enhanced Chemical Vapor Deposited SiCOH Low-k Dielectric Film

2021 ◽  
Author(s):  
V. N. Kruchinin ◽  
V. A. Volodin ◽  
S. V. Rykhlitskii ◽  
V. A. Gritsenko ◽  
I. P. Posvirin ◽  
...  
Keyword(s):  
Optical Properties ◽  
Atomic Structure ◽  
Dielectric Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Low K

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material

Dependence of PECVD Silicon Oxynitride Properties on Deposition Parameters

1988 ◽  
Vol 131 ◽  
Author(s):  
Aubrey L. Helms ◽  
Robert M. Havrilla
Keyword(s):  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Gas Flow Rate ◽  
Process Gas ◽  
Deposition Parameters ◽  
Chemical Vapor Deposited ◽  
Passivation Layers ◽  
Parallel Plate Reactor ◽  
Deposition Conditions

ABSTRACTThe properties of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon oxynitride thin films were determined for a variety of deposition conditions. The films were characterized with respect to stress, refractive index, deposition rate, hydrogen content, dielectric constant, and uniformity. The films were deposited in an Electrotech ND6200 parallel plate reactor using a silane - ammonia - nitrous oxide process gas chemistry. Deposition parameters which were investigated include process gas flow rate, power, and total pressure. The possible application of these films as both inter-layer and final passivation layers for use on GaAs ICs will be discussed.

scholarly journals Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

2020 ◽  
Vol 31 (45) ◽  
pp. 459501
Author(s):  
L Mancini ◽  
M Morassi ◽  
C Sinito ◽  
O Brandt ◽  
L Geelhaar ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor ◽  
Gan Nanowires ◽  
Chemical Vapor Deposited
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