scholarly journals Electrical, optical and structural investigation of plasma-enhanced chemical-vapor-deposited amorphous silicon oxynitride films for solar cell applications

2013 ◽  
Vol 108 ◽  
pp. 180-188 ◽  
Author(s):  
Nils Brinkmann ◽  
Daniel Sommer ◽  
Gabriel Micard ◽  
Giso Hahn ◽  
Barbara Terheiden
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Structural Investigation ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Chemical Vapor Deposited

Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices

2006 ◽  
Vol 37 (1) ◽  
pp. 64-70 ◽  
Author(s):  
A. Szekeres ◽  
T. Nikolova ◽  
S. Simeonov ◽  
A. Gushterov ◽  
F. Hamelmann ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Mos Devices ◽  
Chemical Vapor Deposited ◽  
Alternative Material

Oxygenated and Fluorinated Amorphous Silicon Nitride Films and their Use in Thin Film Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
P. K. Bhat ◽  
H. Ogura ◽  
A. Madan
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Silicon Oxynitride ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Insulator Film

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films

1993 ◽  
Vol 32 (Part 2, No.1A/B) ◽  
pp. L20-L23 ◽  
Author(s):  
Toshiaki Shiraiwa ◽  
Osamu Sugiura ◽  
Hiroshi Kanoh ◽  
Norihito Asai ◽  
Koh-ichi Usami ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited

Hydrogen-Radical Annealing of Chemical Vapor-Deposited Amorphous Silicon Films

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2171-L2173 ◽  
Author(s):  
Yasutaka Uchida ◽  
Hiroshi Kanoh ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Chemical Vapor Deposited ◽  
Hydrogen Radical
Sign in / Sign up

Export Citation Format

Share Document