Quenched‐In Bulk Defects and Interface States in MOS Structures Measured by Transient Capacitance Spectroscopy

1978 ◽  
Vol 125 (10) ◽  
pp. 1664-1667 ◽  
Author(s):  
K. L. Wang
Keyword(s):  
Interface States ◽  
Transient Capacitance ◽  
Capacitance Spectroscopy ◽  
Mos Structures

Conversion Tunneling in Non-Ideal Schottky Barriers: Virtual Resonance Manifestation and Interface States Influence

1996 ◽  
Vol 448 ◽  
Author(s):  
D.A. Romanov ◽  
A.V. Kalameitsev ◽  
A.P. Kovchavtsev ◽  
I.M. Subbotin
Keyword(s):  
Inversion Layer ◽  
Differential Resistance ◽  
Interface States ◽  
Tunnel Current ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Electron States ◽  
Current Voltage ◽  
Transfer Matrix Approach ◽  
Mos Structures

AbstractWe have investigated experimentally and theoretically the elastic conversion tunneling of charge carriers in MOS structures Au on p+-InAs with superthin (10-20 Å) oxide film, the structures used in infrared photodetectors. In these structures the Schottky barrier provides near-surface inversion layer. The tunnel current-voltage (I-V) curves obtained at helium temperatures demonstrate the negative differential resistance region (NDR). We develop semiclassical two-band transfer matrix approach to the conversion tunneling analysis in a multilayer structure and calculate on its base the I-V curves dependence on the structure parameters. The NDR occurs to be caused by the motion of the remote quantum level in the inversion layer. The calculated I-V characteristics agree with the experimental ones quite well. The very existence of NDR and the shape of I-V curves depends strongly on the nature of localized electron states at the semiconductor interface. The characteristics of these electron states are used in the calculations as fitting parameters. Therefore, we suggest a new method for the interface states diagnosis.

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