Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states

1981 ◽  
Vol 18 (3) ◽  
pp. 883-887 ◽  
Author(s):  
E. Kamieniecki ◽  
N. Gomma ◽  
A. Kloc ◽  
R. Nitecki
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Capture Cross ◽  
Thermally Activated ◽  
Insulator Interface ◽  
Transient Capacitance ◽  
Capacitance Spectroscopy

Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

2009 ◽  
Vol 615-617 ◽  
pp. 497-500 ◽  
Author(s):  
Lars S. Løvlie ◽  
Ioana Pintilie ◽  
S. Kumar C.P. ◽  
Ulrike Grossner ◽  
Bengt Gunnar Svensson ◽  
...  
Keyword(s):  
Comparative Study ◽  
Dielectric Relaxation ◽  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Mos Capacitors ◽  
Dry Oxidation ◽  
Good Agreement

The purpose of this work is to compare the density of shallow interface states (Dit) at the interface of SiO2/SiC MOS capacitors as deducted by the conductance spectroscopy (CS) and thermally dielectric relaxation current (TDRC) techniques. Both capacitors of 4H- and 6H-SiC (n-type) are investigated, and both ordinary dry oxidation and an improved industrial procedure have been employed. The two techniques are found to give rather good agreement for interface states located ≥0.3 eV below the conduction band edge (Ec) while for more shallow states vastly different distributions of Dit are obtained. Different reasons for these contradictory results are discussed, such as strong temperature and energy dependence of the capture cross section of the shallow interface states.

Numerical Analysis of Transient Capacitance Data Obtained from Titanium Induced Levels in Silicon

1986 ◽  
Vol 69 ◽  
Author(s):  
E. Courcelle ◽  
A. Mesli ◽  
P. Siffert
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Donor Level ◽  
Hole Trap ◽  
Capture Cross ◽  
Electron Capture Cross Section ◽  
Transient Capacitance ◽  
Capacitance Transient ◽  
Transient Measurements ◽  
Trap Filling

AbstractUsing electrical and optical DLTS analysis based on the capacitance transient measurements and taking into account the spatially dependent capture and the competition between emission and capture, parameters of Titanium levels in silicon are derived. By curve fitting the calculation to trap-filling data, the electron capture cross section of the first donor level (Ec - .284 eV) is found to be 5.8 10-15 exp (.013/kT)cm2 at ξ= 5 104 V/cm. The hole trap capture cross section of the second donor level (Ev + .260 eV) is found to be 1.97 10-17exp (-.017/kT)cm2 at zero electric field.

Interface States at Au/Gaas Schottky Contacts

1985 ◽  
Vol 54 ◽  
Author(s):  
J. Werner ◽  
K. Ploog
Keyword(s):  
Cross Section ◽  
Capture Cross Section ◽  
Wide Frequency Range ◽  
Interface States ◽  
Schottky Contacts ◽  
Conduction Band Edge ◽  
Capture Cross ◽  
Trap States ◽  
Semiconductor Contacts ◽  
Transistor Model

ABSTRACTWe present a new method for the characterization of traps at the interfacial layer of metal/semiconductor contacts. The method is based on measurements of the ac-admittance of Schottky contacts over a wide frequency range. The frequency dependence is analyzed within a new Trap Transistor Model which explains the ac-behavior as well as the dc-characteristics. In particular we propose that the ac-current across the interface consists of capacitive as well as of conductive parts. We are able to deduce the density of trap states at the majority carrier Fermi level as well as the capture cross section of the traps. The model is applied to Au/GaAs-Schottky contacts. We find a weak energy dependence for the density of interface states as well as for their capture cross section within the energy range of 0.45eV to 0.57eV below the conduction band edge.

Steady State and Transient Capacitance Measurements of the Energy Levels of a Low Angle Tilt Boundary in a Germanium Bicrystal

1981 ◽  
Vol 5 ◽  
Author(s):  
A. Broniatowski ◽  
J.C. Bourgoin
Keyword(s):  
Steady State ◽  
Cross Section ◽  
Electron Microscope Study ◽  
Capture Cross Section ◽  
Energy Levels ◽  
Tilt Boundary ◽  
Capture Cross ◽  
Boundary Dislocation ◽  
Capacitance Measurements ◽  
Transient Capacitance

ABSTRACTSteady state and transient capacitance (DLTS) measurements have been performed on a low angle tilt boundary in a germanium bicrystal, in combination with an electron microscope study of the boundary dislocation structure. A characteristic level has been found at 0.42 eV below the bottom of the conduction band, with a density about 109 cm-2 and an electronic capture cross-section about 5 × 10-12 cm2.

Current-Stress-Induced Interface States in p-Si Mos Diodes Detected by a.c. Conductance Measurement

1995 ◽  
Vol 391 ◽  
Author(s):  
Masao Inoue ◽  
Junji Shirafuji
Keyword(s):  
Metal Oxide ◽  
Cross Section ◽  
Capture Cross Section ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capture Cross ◽  
Conductance Measurement ◽  
Current Stress ◽  
Energy Profiles

AbstractEffect of Fowler-Nordheim current stress on (100) p-Si metal/oxide/semiconductor diodes have been studied by means of a.c. conductance measurement. Growth of two distinct peaks are observed in the depletion and the inversion resions corresponding to the generation of two kinds of defects in the upper and lower halves of the bandgap. These defects show different behaviors against the current stress in the energy profiles of the density and the capture cross section. The degradation of the Si/SiO2 interface is discussed in relation to the defect creation.

Measurements of the neutron capture cross section of 243Am around 23.5 keV

2021 ◽  
pp. 1-6
Author(s):  
Yu Kodama ◽  
Tatsuya Katabuchi ◽  
Gerard Rovira ◽  
Atsushi Kimura ◽  
Shoji Nakamura ◽  
...  
Keyword(s):  
Cross Section ◽  
Neutron Capture ◽  
Capture Cross Section ◽  
Capture Cross ◽  
Neutron Capture Cross Section
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