Study of GaAs–oxide interface by transient capacitance spectroscopy: Discrete energy interface states

E. Kamieniecki; T. E. Kazior; J. Lagowski; H. C. Gatos

doi:10.1116/1.570587

Study of GaAs–oxide interface by transient capacitance spectroscopy: Discrete energy interface states

Journal of Vacuum Science and Technology ◽

10.1116/1.570587 ◽

1980 ◽

Vol 17 (5) ◽

pp. 1041-1044 ◽

Cited By ~ 18

Author(s):

E. Kamieniecki ◽

T. E. Kazior ◽

J. Lagowski ◽

H. C. Gatos

Keyword(s):

Interface States ◽

Oxide Interface ◽

Discrete Energy ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Transient capacitance spectroscopy of semiconductor/insulator interface states: Thermally activated capture cross section of Si/SiO2 interface states

Journal of Vacuum Science and Technology ◽

10.1116/1.570984 ◽

1981 ◽

Vol 18 (3) ◽

pp. 883-887 ◽

Cited By ~ 13

Author(s):

E. Kamieniecki ◽

N. Gomma ◽

A. Kloc ◽

R. Nitecki

Keyword(s):

Cross Section ◽

Capture Cross Section ◽

Interface States ◽

Capture Cross ◽

Thermally Activated ◽

Insulator Interface ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Quenched‐In Bulk Defects and Interface States in MOS Structures Measured by Transient Capacitance Spectroscopy

Journal of The Electrochemical Society ◽

10.1149/1.2131268 ◽

1978 ◽

Vol 125 (10) ◽

pp. 1664-1667 ◽

Cited By ~ 13

Author(s):

K. L. Wang

Keyword(s):

Interface States ◽

Transient Capacitance ◽

Capacitance Spectroscopy ◽

Mos Structures

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Transient capacitance spectroscopy on InAs/sub x/P/sub 1-x//InP multiquantum well solar cells structures

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005 PVSC-05 ◽

10.1109/pvsc.2005.1488089 ◽

2005 ◽

Author(s):

A. Khan ◽

S. Marupaduga ◽

A. Freundlich ◽

J. Gou ◽

H. Ko ◽

...

Keyword(s):

Solar Cells ◽

Transient Capacitance ◽

Capacitance Spectroscopy ◽

Multiquantum Well

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈1̄1̄1̄〉 and 〈100〉 orientations

Surface Science ◽

10.1016/0039-6028(84)90541-7 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420 ◽

Cited By ~ 6

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Deep Level ◽

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈〉 and 〈100〉 orientations

Surface Science Letters ◽

10.1016/0167-2584(84)90634-0 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Deep Level ◽

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.8026 ◽

2004 ◽

Vol 43 (12) ◽

pp. 8026-8027 ◽

Cited By ~ 2

Author(s):

Takenobu Yoshino ◽

Nobuhiro Hata ◽

Takamaro Kikkawa

Keyword(s):

Copper Ion ◽

Interlayer Dielectrics ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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MOS interface-state density measurements using transient capacitance spectroscopy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1980.20257 ◽

1980 ◽

Vol 27 (12) ◽

pp. 2231-2239 ◽

Cited By ~ 29

Author(s):

K.L. Wang

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Density Measurements ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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ChemInform Abstract: ELECTROCHEMICAL MEASUREMENTS OF INTERFACE STATES AT THE GALLIUM ARSENIDE/OXIDE INTERFACE

Chemischer Informationsdienst ◽

10.1002/chin.197943011 ◽

1979 ◽

Vol 10 (43) ◽

Author(s):

K. W. JUN. FRESE ◽

S. R. MORRISON

Keyword(s):

Gallium Arsenide ◽

Interface States ◽

Electrochemical Measurements ◽

Oxide Interface

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Generation of interface states at the silicon/oxide interface due to hot‐electron injection

Journal of Applied Physics ◽

10.1063/1.355004 ◽

1993 ◽

Vol 74 (12) ◽

pp. 7364-7368 ◽

Cited By ~ 34

Author(s):

H. Wong ◽

Y. C. Cheng

Keyword(s):

Silicon Oxide ◽

Electron Injection ◽

Interface States ◽

Hot Electron ◽

Oxide Interface ◽

Hot Electron Injection

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Transient capacitance spectroscopy in heavily compensated materials

Physica B+C ◽

10.1016/0378-4363(85)90615-1 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 422-425 ◽

Cited By ~ 3

Author(s):

D. Stievenard ◽

M. Lannoo ◽

J.C. Bourgoin

Keyword(s):

Transient Capacitance ◽

Capacitance Spectroscopy

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