Conversion Tunneling in Non-Ideal Schottky Barriers: Virtual Resonance Manifestation and Interface States Influence

1996 ◽  
Vol 448 ◽  
Author(s):  
D.A. Romanov ◽  
A.V. Kalameitsev ◽  
A.P. Kovchavtsev ◽  
I.M. Subbotin
Keyword(s):  
Inversion Layer ◽  
Differential Resistance ◽  
Interface States ◽  
Tunnel Current ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Electron States ◽  
Current Voltage ◽  
Transfer Matrix Approach ◽  
Mos Structures

AbstractWe have investigated experimentally and theoretically the elastic conversion tunneling of charge carriers in MOS structures Au on p+-InAs with superthin (10-20 Å) oxide film, the structures used in infrared photodetectors. In these structures the Schottky barrier provides near-surface inversion layer. The tunnel current-voltage (I-V) curves obtained at helium temperatures demonstrate the negative differential resistance region (NDR). We develop semiclassical two-band transfer matrix approach to the conversion tunneling analysis in a multilayer structure and calculate on its base the I-V curves dependence on the structure parameters. The NDR occurs to be caused by the motion of the remote quantum level in the inversion layer. The calculated I-V characteristics agree with the experimental ones quite well. The very existence of NDR and the shape of I-V curves depends strongly on the nature of localized electron states at the semiconductor interface. The characteristics of these electron states are used in the calculations as fitting parameters. Therefore, we suggest a new method for the interface states diagnosis.

ELECTRONICS OF MOLECULAR NANOCLUSTERS

2004 ◽  
Vol 03 (01n02) ◽  
pp. 137-147 ◽  
Author(s):  
V. V. KISLOV ◽  
Yu. V. GULYAEV ◽  
V. V. KOLESOV ◽  
I. V. TARANOV ◽  
S. P. GUBIN ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Langmuir Monolayers ◽  
Localized States ◽  
Nanocomposite Films ◽  
Molecular Cluster ◽  
Tunnel Current ◽  
Current Voltage ◽  
Single Electron Tunneling ◽  
Solid Substrates ◽  
Bottom To Top

The molecular nanoclusters proved to be very promising objects for applications in electronics not only because they have absolutely identical chemical structure and allow for bottom to top approach in constructing new electronic devices, but also for the possibility to design and create great variety of such clusters with specific properties. The formation and deposition of mixed Langmuir monolayers composed of inert amphiphile molecular matrix and guest ligand-stabilized metal-core nanoclusters are described. This approach allowed to obtain the ordered stable reproducible planar monolayer and multilayer nanocluster nanostructures on solid substrates. The use of novel polymeric Langmuir monolayers formed by amphiphilic polyelectrolytes and nanoclusters resulted in fabrication of ultimately thin monomolecular nanoscale-ordered stable planar polymeric nanocomposite films. The morphology and electron transport in fabricated nanostructures were studied experimentally using AFM and STM. The effects of single electron tunneling at room temperature through molecular cluster object containing finite number of localized states were theoretically investigated taking into account electron–electron Coulomb interaction. It is shown that tunnel current-bias voltage characteristic of such tunnel junction is characterized by a number of staircase steps equal to the number of cluster's eigenlevels, however the fronts of each steps are asymptotically linear with finite inclination. The analytically obtained current–voltage characteristics are in agreement with experimental results for electron tunneling through molecular nanoclusters at room temperatures.

Ultra-Low Resistance Ni-Based Contacts to n-InP: the Dependence of Contact Resistivity on the Condition of the Metal-Semiconductor Interface

1993 ◽  
Vol 318 ◽  
Author(s):  
Navid S. Fatemi ◽  
Victor G. Weizer
Keyword(s):  
Deposition Process ◽  
Atomic Ratio ◽  
Contact Resistivity ◽  
Semiconductor Interface ◽  
Near Surface ◽  
Process Use ◽  
Fold Reduction ◽  
Specific Contact ◽  
Order Of Magnitude ◽  
First Time

ABSTRACTNear-theoretical-minimum values of specific contact resistivity, ρc (in the mid-to-low E-8 Ω-cm2 range) have been achieved for Ni-based contacts to moderately doped (2E18 cm−3) n-type InP. In each case these values are an order of magnitude lower than those previously achieved. These ultra-low resistivities are shown to result when the metallurgical interaction rate between the contact metal and the semiconductor is sufficiently reduced. Several methods of reducing the metal-InP reaction rate and thus achieving lowered resistivity values are demonstrated. We show, for instance, that the introduction of a thin (100Å) Au layer at the metal-InP interface retards metal-semiconductor intermixing during sintering and results in a ten-fold reduction in pc. Another method consists of ensuring the perfection of the near-surface InP lattice prior to and during contact deposition process. Use of this technique has enabled us to fabricate, for the first time, Ni-only contacts with pc values in the low E-8 Ω-cm2 range. We present an explanation for these observations that is based upon the magnitude of the In-to-P atomic ratio at the metal-InP interface.

CHARGE TRANSPORT THROUGH CARBON NANOTUBE OR FULLERENE–MOLECULE–SILICON JUNCTIONS

NANO ◽  
2007 ◽  
Vol 02 (05) ◽  
pp. 285-294
Author(s):  
FU-REN F. FAN ◽  
BO CHEN ◽  
AUSTEN K. FLATT ◽  
JAMES M. TOUR ◽  
ALLEN J. BARD
Keyword(s):  
Carbon Nanotube ◽  
Charge Transport ◽  
Electron Acceptor ◽  
Negative Differential Resistance ◽  
Fullerene Molecule ◽  
Differential Resistance ◽  
Electron Donors ◽  
Switching Behavior ◽  
Current Voltage ◽  
Bistable Switching

We report here the current–voltage (i–V) characteristics of several (n++- Si /MNOPE/ C 60/ Pt -tip) or (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions, where MNOPE = 2'-mononitro-4, 4'-bis(phenylethynyl)-1-phenylenediazonium and SWCNT = single wall carbon nanotube. A layer of C 60 or SWCNT-derivatized MNOPE has strong effect on the i–V behavior of the junctions, including rectification, negative differential resistance (NDR) and switching behaviors. The i–V curve of a grafted molecular monolayer (GMM) of MNOPE atop n++- Si shows NDR behavior, whereas those of C 60- and SWCNT-derivatized GMMs of MNOPE on n++- Si show strong rectifying behavior with opposite rectification polarities. With C 60, larger currents were found with negative tip bias, while with SWCNT, the forward top bias was positive. Because C 60 tends to be a good electron acceptor and SWCNTs tend to be good electron donors, they show different i–V behavior, as observed. Some of the (n++- Si /MNOPE/SWCNT/ Pt -tip) junctions also show reversible bistable switching behavior.

Effects of different tailoring graphene electrodes on the rectification and negative differential resistance of molecular devices

2018 ◽  
Vol 32 (29) ◽  
pp. 1850323
Author(s):  
Ting Ting Zhang ◽  
Cai Juan Xia ◽  
Bo Qun Zhang ◽  
Xiao Feng Lu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Molecular Devices ◽  
Current Voltage Characteristic ◽  
Functional Theory ◽  
Current Voltage

The electronic transport properties of oligo p-phenylenevinylene (OPV) molecule sandwiched with symmetrical or asymmetric tailoring graphene nanoribbons (GNRs) electrodes are investigated by nonequilibrium Green’s function in combination with density functional theory. The results show that different tailored GNRs electrodes can modulate the current–voltage characteristic of molecular devices. The rectifying behavior can be observed with respect to electrodes, and the maximum rectification ratio can reach to 14.2 in the asymmetric AC–ZZ GNRs and ZZ–AC–ZZ GNRs electrodes system. In addition, the obvious negative differential resistance can be observed in the symmetrical AC-ZZ GNRs system.

Bias Annealing Effect on Hydrogen-Containing Au/N-Silicon Schottky Barrier

1993 ◽  
Vol 319 ◽  
Author(s):  
M.H. Yuan ◽  
Y.Q. Jia ◽  
G.G. Qin
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Annealing Temperature ◽  
Interface States ◽  
Annealing Effect ◽  
Reversible Change ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Hydrogen Incorporation

AbstractAu/n-Si Schottky barrier (SB) incorporated by hydrogen has a 0.13 eV lower SB height (SBH) than that without hydrogen incorporation. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. Besides, the ZBA and RBA cycling experiments reveal a reversible change of the SBH with in at least three cycles. The higher annealing temperature of RBA results in higher SBH. We interpret the above experimental facts as that hydrogen has an effect on metal-semiconductor interface states and then on the SBH, and both the bias on SB and temperature of annealing can influence the hydrogen effects on metal-semiconductor interface states.

scholarly journals Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения

2020 ◽  
Vol 54 (3) ◽  
pp. 285
Author(s):  
В.С. Калиновский ◽  
Е.В. Контрош ◽  
Г.В. Климко ◽  
С.В. Иванов ◽  
В.С. Юферев ◽  
...  
Keyword(s):  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Tunnel Diode ◽  
Tunnel Diodes ◽  
Tunnel Current ◽  
Type Layer ◽  
Current Voltage ◽  
Current Voltage Characteristics

Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

scholarly journals SOFTWARE FOR MEASURING OF DIFFERENTIAL RESISTANCE BY SCANNING OF DIGITAL IMAGES OF ANALOG OSCILLOGRAMS

2021 ◽  
Vol 2 (133) ◽  
pp. 12-19
Author(s):  
Alexander Ivon ◽  
Valery Istushkin
Keyword(s):  
Digital Images ◽  
Differential Resistance ◽  
Electric Currents ◽  
Software Environment ◽  
Linear Resistance ◽  
Current Voltage ◽  
Current Voltage Characteristics

A program for measuring the differential resistance of varistor materials by scanning digital images of analog oscillograms is described. The program was created using the languages HTML, CSS, JavaScript and Canvas technology. The software environment for its execution are Internet browsers. The program can be used to measure linear resistance, which limits the nonlinearity of current-voltage characteristics of varistor materials at high electric currents.

scholarly journals Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

2019 ◽  
Vol 53 (6) ◽  
pp. 816
Author(s):  
С.О. Слипченко ◽  
А.А. Подоскин ◽  
О.С. Соболева ◽  
В.С. Юферев ◽  
В.С. Головин ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Voltage Characteristic ◽  
Balance Model ◽  
Operating Voltage ◽  
Current Voltage Characteristic ◽  
A Value ◽  
Current Voltage ◽  
Algaas Layer ◽  
Current Voltage Characteristics

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

scholarly journals A comparative study of hole and electron inversion layer quantization in MOS structures

2010 ◽  
Vol 7 (2) ◽  
pp. 185-193 ◽  
Author(s):  
Amit Chaudhry ◽  
Nath Roy
Keyword(s):  
Charge Density ◽  
Marked Decrease ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Capacitance ◽  
Variation Approach ◽  
Inversion Charge ◽  
Mos Structures ◽  
Good Agreement

In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.

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