Near‐Surface Damage and Contamination after  CF 4 /  H 2 Reactive Ion Etching of Si

1985 ◽  
Vol 132 (6) ◽  
pp. 1441-1447 ◽  
Author(s):  
G. S. Oehrlein ◽  
R. M. Tromp ◽  
J. C. Tsang ◽  
Y. H. Lee ◽  
E. J. Petrillo
Keyword(s):  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching ◽  
Near Surface

Silicon near-surface damage induced by reactive ion etching

1987 ◽  
Vol 45 ◽  
pp. 244-245
Author(s):  
S. J. Jeng ◽  
G. S. Oehrlein
Keyword(s):  
Silicon Oxide ◽  
Reactive Ion Etching ◽  
Complete Removal ◽  
Surface Damage ◽  
High Resolution Electron Microscopy ◽  
Ion Etching ◽  
Near Surface ◽  
Ion Channeling ◽  
Resolution Electron ◽  
Polysilicon Films

Reactive ion etching (RIE) is an anisotropic etching process which has been used to etch silicon oxide, silicon nitride and polysilicon films. Due to the nonuniformities of etch rate and film thickness, overetching is often required to ensure the complete removal of these films. Previous X-ray photoemission spectroscopy (XPS), He ion channeling, nuclear reaction profiling, Raman scattering and ellipsometry studies have indicated the presence of a fluorocarbon film (30-40 Å) on Si, a heavily disordered layer (∼30 Å) and the etching gas related impurity implantation region (∼250 Å) underneath the Si surface caused by CF4/x% H2 (0≤x≤40) reactive ion etching. In the present investigation, high resolution electron microscopy (HREM) is used to study the structures and distribution of lattice defects in the heavily disordered region. Particular attention is paid to the effects of overetch time and hydrogen addition to CF4 etching gas on Si near-surface damage structures.

Reactive Ion Etching Induced Surface Damage of Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 765-768 ◽  
Author(s):  
Jun Hai Xia ◽  
E. Rusli ◽  
R. Gopalakrishnan ◽  
S.F. Choy ◽  
Chin Che Tin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Textured Surface ◽  
Rf Power ◽  
Power Devices ◽  
Ion Etching ◽  
Maximum Value ◽  
Wide Range ◽  
Coarse Surface

Reactive ion etching of SiC induced surface damage, e.g., micromasking effect induced coarse and textured surface, is one of the main concerns in the fabrication of SiC based power devices [1]. Based on CHF3 + O2 plasma, 4H-SiC was etched under a wide range of RF power. Extreme coarse and textured etched surfaces were observed under certain etching conditions. A super-linear relationship was found between the surface roughness and RF power when the latter was varied from 40 to 160 W. A further increase in the RF power to 200 W caused the surface roughness to drop abruptly from its maximum value of 182.4 nm to its minimum value of 1.3 nm. Auger electron spectroscopy (AES) results revealed that besides the Al micromasking effect, the carbon residue that formed a carbon-rich layer, could also play a significant role in affecting the surface roughness. Based on the AES results, an alternative explanation on the origin of the coarse surface is proposed.

Study of near-surface disorder and surface residues after reactive Ion etching of Silicon

1986 ◽  
Vol 9 (5) ◽  
pp. 275-281 ◽  
Author(s):  
G. S. Oehrlein ◽  
G. J. Coyle ◽  
J. G. Clabes ◽  
Y. H. Lee
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface ◽  
Surface Disorder

Influence of Near-Surface Defects in Si Induced by Reactive Ion Etching on the Electrical Properties of the Pt/n-Si Interface

1997 ◽  
Vol 36 (Part 1, No. 11) ◽  
pp. 6682-6686 ◽  
Author(s):  
Masato Koyama ◽  
Chon-wa Cheong ◽  
Koji Yokoyama ◽  
Iwao Ohdomari
Keyword(s):  
Electrical Properties ◽  
Surface Defects ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Near Surface

Low Damage Magnetron Reactive Ion Etching of GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Mclane ◽  
M. Meyyappan ◽  
M. W. Cole ◽  
H. S. Lee ◽  
R. Lareau ◽  
...  
Keyword(s):  
Minimal Surface ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Surface Damage ◽  
Silicon Tetrachloride ◽  
Attractive Alternative ◽  
Ion Etching

ABSTRACTMagnetron reactive ion etching is an attractive alternative to reactive ion etching since it has the potential for producing minimal surface damage while still retaining the advantages of reactive ion etching. We report here the results of a study of GaAs magnetron ion etching using Freon-12 and silicon tetrachloride etch gases. Differences are found in etch profiles and surface region characteristics of GaAs samples etched by the two gases. The relevant mechanisms are discussed.

scholarly journals A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars

2019 ◽  
Vol 9 (9) ◽  
pp. 1804
Author(s):  
Amal Kabalan
Keyword(s):  
Comparative Study ◽  
Surface Treatment ◽  
Chemical Etching ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Reactive Ion Etching ◽  
Surface Damage ◽  
Ion Etching ◽  
Metal Assisted Chemical Etching

Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approaches: surface passivation by depositing Al2O3, surface passivation by depositing SiO2/SiN, and surface passivation by etching using KOH and Hydrofluoric Nitric Acetic (HNA) solution. It was concluded that passivating with SiO2 and SiN results in the highest carrier lifetime on the MACE and RIE pillars.

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