Influence of Substrate Preparation on the Morphology of GaSb Films Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 132 (3) ◽  
pp. 659-662 ◽  
Author(s):  
Mitsuru Kodama ◽  
Jun Hasegawa ◽  
Morihiko Kimata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Preparation ◽  
Influence Of Substrate

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

Gallium Nitride Epitaxy on Silicon: Importance of Substrate Preparation

1995 ◽  
Vol 395 ◽  
Author(s):  
G. A. Martin ◽  
B. N. Sverdlov ◽  
A. Botchkarev ◽  
H. Morkoç ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Substrate Preparation ◽  
Rocking Curve ◽  
X Ray ◽  
Surface Steps ◽  
Threading Defects ◽  
Atomically Flat

ABSTRACTHexagonal GaN films grown on non-isomorphic substrates are usually characterized by numerous threading defects which are essentially boundaries between wurtzite GaN domains where the stacking sequences do not align. One origin of these defects is irregularities on the substrate surface such as surface steps. Using Si <111> substrates and a substrate preparation procedure that makes wide atomically flat terraces, we demonstrate that reduction of these irregularities greatly improves the crystalline and luminescent quality of GaN films grown by plasma-enhanced molecular beam epitaxy. X-ray rocking curve width decreases from over 1 degree to less than 20 minutes, while PL halfwidth decreases from over 15 meV to less than 10 meV.

The Influence of Substrate Polarity on the Blue Emission from As-doped GaN Layers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 798 ◽  
Author(s):  
S. V. Novikov ◽  
L. X. Zhao ◽  
C. T. Foxon ◽  
I. Harrison ◽  
R. P. Campion ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Blue Emission ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Sample Orientation ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strong Blue Emission ◽  
Influence Of Substrate

ABSTRACTThe influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on aplane (11–20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000–1) oriented N-polarity layers.

Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (10) ◽  
pp. 5115-5120 ◽  
Author(s):  
D. C. Radulescu ◽  
G. W. Wicks ◽  
W. J. Schaff ◽  
A. R. Calawa ◽  
L. F. Eastman
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Impurity Incorporation ◽  
Influence Of Substrate
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