ChemInform Abstract: INFLUENCE OF SUBSTRATE PREPARATION ON THE MORPHOLOGY OF GALLIUM ANTIMONIDE FILMS GROWN BY MOLECULAR BEAM EPITAXY

1985 ◽  
Vol 16 (37) ◽  
Author(s):  
M. KODAMA ◽  
J. HASEGAWA ◽  
M. KIMATA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Substrate Preparation ◽  
Influence Of Substrate

p‐type doping of gallium antimonide grown by molecular beam epitaxy using silicon

1990 ◽  
Vol 57 (21) ◽  
pp. 2256-2258 ◽  
Author(s):  
T. M. Rossi ◽  
D. A. Collins ◽  
D. H. Chow ◽  
T. C. McGill
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
P Type

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

scholarly journals Chemical Mechanical Polishing of GaSb Wafers for Significantly Improved Surface Quality

2021 ◽  
Vol 8 ◽  
Author(s):  
Bing Yan ◽  
Hongyu Liang ◽  
Yongfeng Liu ◽  
Weihua Liu ◽  
Wenhui Yuan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Surface Quality ◽  
Chemical Mechanical Polishing ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Mechanical Polishing ◽  
High Quality ◽  
X Ray ◽  
Atomic Force

Gallium antimonide (GaSb) is considered an ideal substrate for heterostructure growth via molecular beam epitaxy. A significant aspect that inhibits the widespread application of infrared plane-array detector growth on GaSb is the starting substrate surface quality. In this study, the chemical mechanical polishing of GaSb wafers is investigated by considering the effects of the polishing pad, polishing solution, polishing time and pH buffer on their surface morphology and roughness. The surface morphology and root mean square (RMS) roughness of the free-standing wafers are characterized using a white light interferometer, a laser interferometer and an atomic force microscope. X-ray tomography is employed to measure the surface crystalline quality and strain defects of the samples subjected to the polishing treatments. The results show that with the optimum polishing condition, the polished GaSb wafers demonstrate high-quality surfaces without haze, scratches or strain defect regions. The peak to valley value is 5.0 μm and the RMS roughness can be controlled at less than 0.13 nm. A buffer layer grown on the GaSb surface with molecular beam epitaxy is examined via atomic force microscopy and high-resolution X-ray diffraction, which show a low RMS roughness of 0.159 nm, a well-controlled two-dimensional growth mode and a full width half maximum of the Bragg diffraction peak of 14.2”, indicating high-quality GaSb wafers. Thus, this work provides useful guidelines for achieving GaSb wafers with high-quality surfaces that show significant promise for substrate applications.

Sulfur doping behavior of gallium antimonide grown by molecular‐beam epitaxy

1988 ◽  
Vol 63 (2) ◽  
pp. 395-399 ◽  
Author(s):  
I. Poole ◽  
M. E. Lee ◽  
K. E. Singer ◽  
J. E. F. Frost ◽  
T. M. Kerr ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gallium Antimonide ◽  
Sulfur Doping ◽  
Doping Behavior

Gallium Nitride Epitaxy on Silicon: Importance of Substrate Preparation

1995 ◽  
Vol 395 ◽  
Author(s):  
G. A. Martin ◽  
B. N. Sverdlov ◽  
A. Botchkarev ◽  
H. Morkoç ◽  
D. J. Smith ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Substrate Preparation ◽  
Rocking Curve ◽  
X Ray ◽  
Surface Steps ◽  
Threading Defects ◽  
Atomically Flat

ABSTRACTHexagonal GaN films grown on non-isomorphic substrates are usually characterized by numerous threading defects which are essentially boundaries between wurtzite GaN domains where the stacking sequences do not align. One origin of these defects is irregularities on the substrate surface such as surface steps. Using Si <111> substrates and a substrate preparation procedure that makes wide atomically flat terraces, we demonstrate that reduction of these irregularities greatly improves the crystalline and luminescent quality of GaN films grown by plasma-enhanced molecular beam epitaxy. X-ray rocking curve width decreases from over 1 degree to less than 20 minutes, while PL halfwidth decreases from over 15 meV to less than 10 meV.

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