A Mathematical Model of Silicon Chemical Vapor Deposition: Further Refinements and the Effects of Thermal Diffusion

1986 ◽  
Vol 133 (6) ◽  
pp. 1206-1213 ◽  
Author(s):  
Michael E. Coltrin ◽  
Robert J. Kee ◽  
James A. Miller
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Thermal Diffusion ◽  
Vapor Deposition ◽  
Chemical Vapor

A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-45-C5-45
Author(s):  
Y. J. PARK ◽  
G. J. MIN ◽  
Y. W. PARK ◽  
C. O. PARK ◽  
J. S. CHUN
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Cold Wall

Impact of Thermodiffusion on Carbon Nanotube Growth by Chemical Vapor Deposition

2010 ◽  
Vol 132 (8) ◽  
Author(s):  
Andrew C. Lysaght ◽  
Wilson K. S. Chiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Diffusion ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Scale Model ◽  
Single Wall Carbon Nanotubes ◽  
Heterogeneous Chemical Reaction ◽  
Energy Equations ◽  
The Impact ◽  
Swnt Growth

Thermal diffusion, the process by which a multicomponent mixture develops a concentration gradient when exposed to a temperature gradient, has been studied in order to understand if its inclusion is warranted in the modeling of single-wall carbon nanotubes (SWNTs) synthesis by thermal chemical vapor deposition (CVD). A fully coupled reactor-scale model employing conservation of mass, momentum, species, and energy equations with detailed gas phase and surface reaction mechanisms has been utilized to describe the evolution of hydrogen and hydrocarbon feed streams as they undergo transport, as well as homogeneous and heterogeneous chemical reaction within a CVD reactor. Steady state velocity, temperature, and concentration fields within the reactor volume are determined, as well as concentrations of adsorbed species and SWNT growth rates. The effect of thermodiffusion in differing reactor conditions has been investigated to understand the impact on SWNT growth. Thermal diffusion can have a significant impact on SWNT growth, and the first approximation of the thermal diffusion factor, based on the Chapman–Enskog molecular theory, is sufficient for modeling thermophoretic behavior within a CVD reactor. This effect can be facilitatory or inhibitory, based on the thermal and mass flux conditions. The results of this investigation are useful in order to optimize model and reactor designs to promote optimal SWNT deposition rates.

Rapid Growth of Ceramic Films by Particle-Vapor Codeposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Robert H. Hurt ◽  
Mark D. Allendorf
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Ceramic Films

AbstractParticle-enhanced chemical vapor deposition (PECVD) is capable of producing ceramic films at high deposition rates. A mathematical model of the particle-vapor codeposition process has been developed and has been applied to PECVD processes to predict deposition rate enhancements and deposit properties.

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