Development and Validation of a Mathematical Model for the Chemical Vapor Deposition of Silica from Mixtures of Chlorosilanes, Carbon Dioxide, and Hydrogen

2002 ◽  
Vol 149 (2) ◽  
pp. C120 ◽  
Author(s):  
Stephanos F. Nitodas ◽  
Stratis V. Sotirchos
Keyword(s):  
Carbon Dioxide ◽  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Development And Validation

A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR

1989 ◽  
Vol 50 (C5) ◽  
pp. C5-45-C5-45
Author(s):  
Y. J. PARK ◽  
G. J. MIN ◽  
Y. W. PARK ◽  
C. O. PARK ◽  
J. S. CHUN
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Cold Wall

Rapid Growth of Ceramic Films by Particle-Vapor Codeposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Robert H. Hurt ◽  
Mark D. Allendorf
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Ceramic Films

AbstractParticle-enhanced chemical vapor deposition (PECVD) is capable of producing ceramic films at high deposition rates. A mathematical model of the particle-vapor codeposition process has been developed and has been applied to PECVD processes to predict deposition rate enhancements and deposit properties.

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