Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching

1986 ◽  
Vol 133 (2) ◽  
pp. 408-416 ◽  
Author(s):  
A. Rohatgi ◽  
P. Rai‐Choudhury ◽  
S. J. Fonash ◽  
P. Lester ◽  
Ranbir Singh ◽  
...  
Keyword(s):  
Surface Modification ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
And Control

Effects of Post Etch Treatments on Contaminated Silicon Surface Due to Chf3/C2F6 Reactive ion Etching

1993 ◽  
Vol 315 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
S.-H. Lee ◽  
S. Nahm ◽  
J.-W. Lee ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching

Surface Modification of Absorbable Magnesium Stents by Reactive Ion Etching

2013 ◽  
Vol 33 (6) ◽  
pp. 1137-1152 ◽  
Author(s):  
E. Galvin ◽  
M. M. Morshed ◽  
C. Cummins ◽  
S. Daniels ◽  
C. Lally ◽  
...  
Keyword(s):  
Surface Modification ◽  
Reactive Ion Etching ◽  
Ion Etching

Highly Controllable Nano-texturing of Silicon Using Hydrogen-assisted Reactive Ion Etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Mahdieh Mehran ◽  
Zeinab Sanaee ◽  
Shamsoddin Mohajerzadeh
Keyword(s):  
Silicon Surface ◽  
Oil Spills ◽  
Reactive Ion Etching ◽  
Rf Plasma ◽  
Silicon Substrates ◽  
Gas Flows ◽  
Plasma Power ◽  
Etching Technique ◽  
Ion Etching ◽  
Etching Parameters

AbstractWe propose a hydrogen assisted reactive ion etching method for generating nano-grass and nano-texturing of silicon substrates in desirable shapes and locations. The etching technique is based on sequential etching and passivation steps where a combination of three gases of H2, O2 and SF6 in the presence of RF plasma is exploited. Using this method it has been possible to realize high aspect ratio features on silicon substrates whereas by adjusting the etching parameters, it is possible to form texturing of silicon in desired places. This technique is highly programmable where the pressure, gas flows, plasma power and duration of each cycle can be preset to achieve desired features. The formation of nano-grass on the silicon surface improves its wetability both to water and oil spills.

Recovery of Silicon Surface after Reactive Ion Etching ofSiO2usingCHF3/C2F6Plasma

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1611-1616 ◽  
Author(s):  
Kwang-Ho Kwon ◽  
Hyung-Ho Park ◽  
Kyung-Soo Kim ◽  
Chang-II Kim ◽  
Yung-Kwon Sung
Keyword(s):  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching
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