Surface Modification of Positive Photoresist Mask during Reactive Ion Etching of Si and W in  SF 6 Plasma

1991 ◽  
Vol 138 (1) ◽  
pp. 284-289 ◽  
Author(s):  
Ch. Cardinaud ◽  
M. C. Peignon ◽  
G. Turban
Keyword(s):  
Surface Modification ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Positive Photoresist ◽  
Photoresist Mask

Surface Modification of Absorbable Magnesium Stents by Reactive Ion Etching

2013 ◽  
Vol 33 (6) ◽  
pp. 1137-1152 ◽  
Author(s):  
E. Galvin ◽  
M. M. Morshed ◽  
C. Cummins ◽  
S. Daniels ◽  
C. Lally ◽  
...  
Keyword(s):  
Surface Modification ◽  
Reactive Ion Etching ◽  
Ion Etching

CF4–Ar reactive ion etching of gallium arsenide

1989 ◽  
Vol 67 (4) ◽  
pp. 259-261
Author(s):  
P. Lussier ◽  
M. Bélanger ◽  
M. Meunier ◽  
J. F. Currie
Keyword(s):  
Surface State ◽  
Etch Rate ◽  
Dielectric Film ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Positive Photoresist ◽  
Barrier Heights ◽  
Capacitance Voltage ◽  
State Densities ◽  
Good Agreement

A systematic study of the etch rate of GaAs and of positive photoresist for different mixtures of argon and carbon tetrafluoride was conducted over radio frequency powers (from 0.06 W/cm2 to 0.55 W/cm2), pressures (from 6 to 35 mTorr (1 Torr = 133.3 Pa)), and concentrations of CF4 in Ar (0–60% with a constant mass flow of 10 sccm). Capacitance–voltage and I–V measurements on GaAs diodes made after reactive ion etching were carried out to estimate possible etching damage through thin dielectric film and surface state creation. Etch rates up to 200 Å/min were obtained on GaAs with low damage in a 40% CF4, 20 mTorr, and 0.55 W/cm2 plasma while the etch rate of the patterning photoresist was 600 Å/min. These results are in good agreement with those reported in literature. The ideality factors and Schottky barrier heights of reactive ion etching of GaAs are comparable to those obtained by sulphuric and peroxide acid etching. However, reactive ion etched samples seem to suffer from higher surface state densities as measured by C–V techniques.

Characterization and Control of Silicon Surface Modification Produced by CCl4 Reactive Ion Etching

1986 ◽  
Vol 133 (2) ◽  
pp. 408-416 ◽  
Author(s):  
A. Rohatgi ◽  
P. Rai‐Choudhury ◽  
S. J. Fonash ◽  
P. Lester ◽  
Ranbir Singh ◽  
...  
Keyword(s):  
Surface Modification ◽  
Silicon Surface ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
And Control

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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