Solid‐Phase Ohmic Contact to p ‐ GaAs with W and W‐N Diffusion Barriers

1987 ◽  
Vol 134 (7) ◽  
pp. 1755-1758 ◽  
Author(s):  
Frank C. T. So ◽  
Elzbieta Kolawa ◽  
Jawahar Tandon ◽  
Marc‐A. Nicolet
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Diffusion Barriers

Solid-Phase Reactions of Diffusion Barriers of Ti and TiN to Copper Layers onSiO2

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 4027-4033 ◽  
Author(s):  
Mayumi Takeyama ◽  
Atsushi Noya ◽  
Kouichirou Sakanishi ◽  
Hikaru Seki ◽  
Katsutaka Sasaki
Keyword(s):  
Solid Phase ◽  
Diffusion Barriers ◽  
Solid Phase Reactions

Ge/Pd (Zn) Ohmic contact scheme on p‐InP based on the solid phase regrowth principle

1995 ◽  
Vol 66 (24) ◽  
pp. 3310-3312 ◽  
Author(s):  
L. C. Wang ◽  
Moon‐Ho Park ◽  
Fei Deng ◽  
A. Clawson ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

1997 ◽  
Vol 81 (7) ◽  
pp. 3138-3142 ◽  
Author(s):  
Moon-Ho Park ◽  
L. C. Wang ◽  
D. C. Dufner ◽  
Fei Deng ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

scholarly journals TiB2 and ZrB2 diffusion barriers in GaAs Ohmic contact technology

1985 ◽  
Vol 3 (6) ◽  
pp. 2255-2258 ◽  
Author(s):  
J. Shappirio ◽  
J. Finnegan ◽  
R. Lux ◽  
D. Fox ◽  
J. Kwiatkowski ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Diffusion Barriers

Solid-Phase Ohmic Contacts to GaAs with TiN Diffusion Barriers

1984 ◽  
Vol 37 ◽  
Author(s):  
H. P. Kattelus ◽  
J. L. Tandon ◽  
A. H. Hamdi ◽  
M-A. Nicolet
Keyword(s):  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Thermally Stable ◽  
Ohmic Behavior ◽  
Tin Film ◽  
The Stability ◽  
P Type

AbstractWe report on contacts to p-type GaAs formed by a GaAs/Pt/TiN/Ag system. Ohmic behavior in this system is believed to be accomplished by the solidstate reaction of Pt with GaAs. This reaction is confined by the TiN film which is thermally stable. In addition, the TiN film acts as an excellent diffusion barrier in preventing the intermixing of the top Ag layer with GaAs or Pt. Contacts formed with such controlled reaction have important implications for the stability of shallow p-n junction devices.

Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy

1985 ◽  
Vol 47 (3) ◽  
pp. 298-300 ◽  
Author(s):  
E. D. Marshall ◽  
W. X. Chen ◽  
C. S. Wu ◽  
S. S. Lau ◽  
T. F. Kuech
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Epitaxy

Nonspiking ohmic contact top‐GaAs by solid‐phase regrowth

1990 ◽  
Vol 68 (11) ◽  
pp. 5714-5718 ◽  
Author(s):  
C. C. Han ◽  
X. Z. Wang ◽  
L. C. Wang ◽  
E. D. Marshall ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth
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