The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
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Published By IEEE

9781467311984, 9781467311977, 9781467311960

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418560 ◽

2012 ◽

Author(s):

R. Stoklas ◽

D. Gregusova ◽

J. Novak ◽

P. Kordos ◽

M. Tajima ◽

...

Keyword(s):

Atomic Layer ◽

Gate Oxide

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Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418582 ◽

2012 ◽

Author(s):

F. Dubecky ◽

P. Hubik ◽

E. Gombia ◽

D. Kindl ◽

M. Dubecky ◽

...

Keyword(s):

Fermi Level

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Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418547 ◽

2012 ◽

Author(s):

Ka Wa Ian ◽

Michael Exarchos ◽

Mohamed Missous

Keyword(s):

Room Temperature

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Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418572 ◽

2012 ◽

Author(s):

Juraj Marek ◽

Daniel Donoval ◽

Miroslav Petrus ◽

Oubica Stuchlikova ◽

Ales Chvala ◽

...

Keyword(s):

Low Voltage ◽

Electrical Parameters ◽

Power Mosfet

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Interface traps in insulator/AlGaN/GaN heterostructure capacitors

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418555 ◽

2012 ◽

Author(s):

J. Osvald

Keyword(s):

Interface Traps ◽

Gan Heterostructure

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Conductive metal oxide based gates for self-aligned technology of AlGaN/GaN HEMTs

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418564 ◽

2012 ◽

Author(s):

G. Vanko ◽

M. Vallo ◽

I. Ryger ◽

J. Dzuba ◽

T. Lalinsky

Keyword(s):

Metal Oxide ◽

Gan Hemts

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Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418532 ◽

2012 ◽

Author(s):

Wojciech Macherzynski ◽

Bogdan Paszkiewicz

Keyword(s):

Ohmic Contact ◽

Diffusion Barriers

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Photocurrents in double-layer organic field-effect transistors

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418514 ◽

2012 ◽

Author(s):

J. Jakabovic ◽

M. Weis ◽

J. Kovac ◽

D. Donoval ◽

M. Donoval ◽

...

Keyword(s):

Double Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Estimation of exposure parameters of chosen e-beam resists using variable shaped e-beam pattern generator

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418541 ◽

2012 ◽

Author(s):

Robert Andok ◽

Ladislav Matay ◽

Ivan Kostic ◽

Anna Bencurova ◽

Pavol Nemec ◽

...

Keyword(s):

Pattern Generator ◽

Beam Pattern

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Improving output power of terahertz heterodyne photomixer by impedance matching

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418552 ◽

2012 ◽

Cited By ~ 1

Author(s):

L. Juul ◽

M. Mikulics ◽

M. Marso

Keyword(s):

Output Power ◽

Impedance Matching

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The Ninth International Conference on Advanced Semiconductor Devices and MircosystemsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Current instabilities and other reliability aspects in AlGaN/GaN MOS-HFETs with atomic layer deposited Al2O3 as gate oxide

Metal/SI GaAs/Metal systems: Demonstration of unpinning of the Fermi level at the interface

Fabrication of 250-nm T-gate In52Al48As-In70Ga30As pHEMT using a novel solvent reflow technique at room temperature

Degradation of the low voltage power MOSFET electrical parameters during multipulse UIS test

Interface traps in insulator/AlGaN/GaN heterostructure capacitors

Conductive metal oxide based gates for self-aligned technology of AlGaN/GaN HEMTs

Development of diffusion barriers for Ti/Al based ohmic contact to AlGaN/GaN heterostructures

Photocurrents in double-layer organic field-effect transistors

Estimation of exposure parameters of chosen e-beam resists using variable shaped e-beam pattern generator

Improving output power of terahertz heterodyne photomixer by impedance matching

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
Latest Publications