Ge/Pd (Zn) Ohmic contact scheme on p‐InP based on the solid phase regrowth principle

1995 ◽  
Vol 66 (24) ◽  
pp. 3310-3312 ◽  
Author(s):  
L. C. Wang ◽  
Moon‐Ho Park ◽  
Fei Deng ◽  
A. Clawson ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

1997 ◽  
Vol 81 (7) ◽  
pp. 3138-3142 ◽  
Author(s):  
Moon-Ho Park ◽  
L. C. Wang ◽  
D. C. Dufner ◽  
Fei Deng ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

Nonspiking ohmic contact top‐GaAs by solid‐phase regrowth

1990 ◽  
Vol 68 (11) ◽  
pp. 5714-5718 ◽  
Author(s):  
C. C. Han ◽  
X. Z. Wang ◽  
L. C. Wang ◽  
E. D. Marshall ◽  
S. S. Lau ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

Ni/Si-Based Ohmic Contacts to p- and n-Type GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. Kamińska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
M. Guziewicz ◽  
S. Kasjaniuk ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Contact Region ◽  
Structural Transformations ◽  
Initial Reaction ◽  
Ohmic Behavior ◽  
Region I ◽  
Solid Phase Regrowth

AbstractNi/Si-based ohmic contact scheme for GaN, based on the solid-phase regrowth (SPR) mechanism have been developed. Using Mg and Si as dopant species, ohmic contacts with a resistivity of ∼1*10-3Ωcm2 to p-GaN (p≈3*1017 cm-3) and n-GaN (n≈2*1017cm-3), respectively, have been obtained. SIMS, XRD, and RBS analysis show in as-deposited contacts, an initial reaction at GaN/Ni interface, leading to the formation of an Ni-Ga-N layer. The ohmic behavior of contacts, observed after annealing at 400°C, is accompanied by structural transformations in the contact region: i) the decomposition of Ni-Ga-N layer and ii) the growth of NiSi compound.

Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle

1996 ◽  
Vol 32 (4) ◽  
pp. 409 ◽  
Author(s):  
L.C. Wang ◽  
Moon-Ho Park ◽  
H.A. Jorge ◽  
I.H. Tan ◽  
F. Kish
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Solid Phase Regrowth

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

The Development of Solid Phase Regrowth on GaAs and its applications

1993 ◽  
Vol 319 ◽  
Author(s):  
L. C. Wang
Keyword(s):  
Ohmic Contacts ◽  
Solid Phase ◽  
Low Loss ◽  
Ohmic Behavior ◽  
Gaas Substrates ◽  
Layer Structures ◽  
Solid Phase Reactions ◽  
Solid Phase Regrowth ◽  
P Type ◽  
Ohmic Contact Formation

AbstractA solid phase regrowth process on GaAs has been observed in Pd- and Ni- based bi-layer structures, e.g. the Si/Ni, the Ge/Pd, the In/Pd, and the Sb/Pd structures. Due to the regrowth, uniform epitaxial layers of Ge, GaAs, InxGa1-xAs, and GaSbl-xAsx on GaAs substrates by solid phase reactions can achieved. The model of this regrowth process will be presented. Based on this regrowth mechanism, a series of non-spiking planar ohmic contacts on n and p type GaAs have been developed. Low contact resistivity in the range of mid 10−7 Ω-cm2 was obtained. The ohmic contact formation mechanism of these contacts will also be discussed. All the studies suggest that the ohmic behavior is a result of the formation of an n+ or p+ surface layer via solid phase reactions. The regrowth process has also been utilized to achieve compositional disordering of GaAs/AlGaAs superlattices, and low loss AlGaAs/GaAs waveguide has been obtained.

Solid‐Phase Ohmic Contact to p ‐ GaAs with W and W‐N Diffusion Barriers

1987 ◽  
Vol 134 (7) ◽  
pp. 1755-1758 ◽  
Author(s):  
Frank C. T. So ◽  
Elzbieta Kolawa ◽  
Jawahar Tandon ◽  
Marc‐A. Nicolet
Keyword(s):  
Ohmic Contact ◽  
Solid Phase ◽  
Diffusion Barriers

Electron and Ion Beam-Stimulated Solid Phase Regrowth of Phosphorus-Implanted Silicon

1986 ◽  
Author(s):  
M. Miyao ◽  
A. Polman ◽  
R. van Kemp ◽  
W. Sinke ◽  
J. E. M. Westendorp ◽  
...  
Keyword(s):  
Solid Phase ◽  
Ion Beam ◽  
Solid Phase Regrowth

Ohmic Contact Formation Mechanism in the Ge/Pd/N-GaAs System

1989 ◽  
Vol 148 ◽  
Author(s):  
E.D. Marshall ◽  
S.S. Lau ◽  
C.J. Palmstrøm ◽  
T. Sands ◽  
C.L. Schwartz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Solid Phase ◽  
Cross Sectional ◽  
Ohmic Behavior ◽  
Transmission Electron ◽  
Solid Phase Regrowth ◽  
Ohmic Contact Formation ◽  
Secondary Ion

ABSTRACTAnnealed Ge/Pd/n-GaAs samples utilizing substrates with superlattice marker layers have been analyzed using high resolution backside secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Interfacial compositional and microstructural changes have been correlated with changes in contact resistivity. The onset of good ohmic behavior is correlated with the decomposition of an intermediate epitaxial Pd4(GaAs,Ge2) phase and solid-phase regrowth of Ge-incorporated GaAs followed by growth of a thin Ge epitaxial layer.

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