Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations

1987 ◽  
Vol 62 (8) ◽  
pp. 3388-3397 ◽  
Author(s):  
James H. Comfort ◽  
Linda M. Garverick ◽  
Rafael Reif
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Low Dose ◽  
Ion Bombardment ◽  
Surface Cleaning ◽  
Epitaxial Silicon ◽  
Silicon Deposition ◽  
Argon Ion Bombardment ◽  
Argon Ion

Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality

1987 ◽  
Vol 62 (8) ◽  
pp. 3398-3404 ◽  
Author(s):  
L. M. Garverick ◽  
J. H. Comfort ◽  
T. R. Yew ◽  
R. Reif ◽  
F. A. Baiocchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Low Dose ◽  
Ion Bombardment ◽  
Surface Cleaning ◽  
Epitaxial Deposition ◽  
Argon Ion Bombardment ◽  
Argon Ion

Incorporation of Ambient Oxygen During Silicon Deposition and the Effects of Argon Ion Bombardment

1990 ◽  
Vol 201 ◽  
Author(s):  
David W. Brown ◽  
Graham K. Hubler
Keyword(s):  
Electron Beam ◽  
Ion Bombardment ◽  
Electron Beam Evaporation ◽  
Sticking Coefficient ◽  
Adsorption Model ◽  
Silicon Deposition ◽  
Ambient Oxygen ◽  
Argon Ion Bombardment ◽  
Argon Ions ◽  
Argon Ion

AbstractThe composition of SiOx films deposited by electron-beam evaporation of silicon in an oxygen atmosphere was measured as a function of silicon deposition rate and oxygen pressure. The compositions varied between X = 0.03 and 2.1 depending on the ratio of O2 molecules to Si atoms arriving at the substrate. Bombardment with 500 eV argon ions caused X to decrease at low arrival ratio and to increase at higher arrival ratio. The results are analyzed using an adsorption model in which chemisorption of O2 occurs after physisorption into one of two states: one on silicon and one on SiO2. A fit to the data for the unbombarded samples is achieved if physisorption occurs only on silicon. From this fit a sticking coefficient of 0.05 is obtained for O2 chemisorption on silicon. The effects of ion bombardment are consistent with the model if bombardment allows O2 to also physisorb on SiO2 and migrate to silicon where it chemisorbs.

Influence of argon ion bombardment on the oxidation of nickel surfaces

1996 ◽  
Vol 369 (1-3) ◽  
pp. 217-230 ◽  
Author(s):  
Juan Carlos de Jesús ◽  
Pedro Pereira ◽  
José Carrazza ◽  
Francisco Zaera
Keyword(s):  
Ion Bombardment ◽  
Argon Ion Bombardment ◽  
Argon Ion

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion

scholarly journals Effect of argon ion bombardment on amorphous silicon carbonitride films

2014 ◽  
Vol 480 ◽  
pp. 012021
Author(s):  
R G S Batocki ◽  
R P Mota ◽  
R Y Honda ◽  
D C R Santos
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Silicon Carbonitride ◽  
Argon Ion Bombardment ◽  
Argon Ion
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