Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures: II . Plasma Enhanced Deposition

1989 ◽  
Vol 136 (8) ◽  
pp. 2398-2405 ◽  
Author(s):  
James H. Comfort ◽  
Rafael Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Epitaxial Silicon

Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

1999 ◽  
Vol 75 (7) ◽  
pp. 992-994 ◽  
Author(s):  
J. Thiesen ◽  
E. Iwaniczko ◽  
K. M. Jones ◽  
A. Mahan ◽  
R. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Hot Wire

scholarly journals The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 570 ◽  
Author(s):  
J. Thiesen ◽  
K.M. Jones ◽  
R. Matson ◽  
R. Reedy ◽  
E. Iwaniczko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Ion Beam ◽  
Chemical Vapor ◽  
High Growth ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
P Type

ABSTRACTWe report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields epitaxial Si at the comparatively low temperatures of 195° to 450°C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize, as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 8×104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.

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