scholarly journals The Growth of Homo-Epitaxial Silicon at Low Temperatures Using Hot Wire Chemical Vapor Deposition

1999 ◽  
Vol 570 ◽  
Author(s):  
J. Thiesen ◽  
K.M. Jones ◽  
R. Matson ◽  
R. Reedy ◽  
E. Iwaniczko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Ion Beam ◽  
Chemical Vapor ◽  
High Growth ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Transmission Electron ◽  
P Type

ABSTRACTWe report on the first known growth of high-quality epitaxial Si via the hot wire chemical vapor deposition (HWCVD) method. This method yields epitaxial Si at the comparatively low temperatures of 195° to 450°C, and relatively high growth rates of 3 to 20 Å/sec. Layers up to 4500-Å thick have been grown. These epitaxial layers have been characterized by transmission electron microscopy (TEM), indicating large regions of nearly perfect atomic registration. Electron channeling patterns (ECPs) generated on a scanning electron microscope (SEM) have been used to characterize, as well as optimize the growth process. Electron beam induced current (EBIC) characterization has also been performed, indicating defect densities as low as 8×104/cm2. Secondary ion beam mass spectrometry (SIMS) data shows that these layers have reasonable impurity levels within the constraints of our current deposition system. Both n and p-type layers were grown, and p/n diodes have been fabricated.

Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

1999 ◽  
Vol 75 (7) ◽  
pp. 992-994 ◽  
Author(s):  
J. Thiesen ◽  
E. Iwaniczko ◽  
K. M. Jones ◽  
A. Mahan ◽  
R. Crandall
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Epitaxial Silicon ◽  
Hot Wire

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition

2005 ◽  
Vol 862 ◽  
Author(s):  
Charles W. Teplin ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Silicon Films ◽  
Hot Wire ◽  
Transmission Electron ◽  
Increasing Temperature

AbstractWe have studied silicon films grown epitaxially on silicon wafers using hot-wire chemical vapor deposition (HWCVD) with a tantalum filament. Silicon films were grown on (100)-oriented hydrogen terminated silicon wafers at temperatures from 175°C to 480°C, using a Ta filament 5 cm from the substrate to decompose pure SiH4 gas. The progression of epitaxy was monitored using real-time spectroscopic ellipsometry (RTSE). Analysis using RTSE, transmission electron microscopy (TEM), and scanning electron microscopy shows that at a characteristic thickness, hepi all of the films break down into a-Si:H cones. Below 380°C, both hepi and the thickness of the transition to pure a-Si:H increase with increasing temperature. Above 380°C, hepi was not observed to increase further but TEM images show fewer defects in the epitaxial regions. Secondary ion-mass spectrometry shows that the oxygen concentration remains nearly constant during growth (<1018 cm-3). The hydrogen concentration is found to increase substantially with film thickness from 5·1018 to 5·1019 cm-3, likely due to the incorporation of hydrogen into the a-Si:H cones that grow after the breakdown of epitaxy.

Roughness, impurities and strain in low-temperature epitaxial silicon films grown by tantalum filament hot-wire chemical vapor deposition

2006 ◽  
Vol 910 ◽  
Author(s):  
Charles W. Teplin ◽  
Matthew Page ◽  
Eugene Iwaniczko ◽  
Kim M. Jones ◽  
Robert M. Ready ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
Hot Wire ◽  
Film Interface

AbstractWe grow epitaxial silicon films onto (100) silicon wafers from pure silane by hot-wire chemical vapor deposition (HWCVD). The films grow epitaxially for a thickness hepi before a Si:H cones nucleate and expand. We study the dependence of hepi on growth rate and the differences between Ta and W filaments. The surface morphology of thin but completely epitaxial films are studied in order to correlate the surface roughness during growth with the eventual epitaxial breakdown thickness. Surface roughness, strain and H at the wafer/film interface are not likely to cause the observed breakdown.

Development of a hot-wire chemical vapor deposition n-type emitter on p-type crystalline Si-based solar cells

2003 ◽  
Vol 430 (1-2) ◽  
pp. 208-211 ◽  
Author(s):  
Qi Wang ◽  
M.R. Page ◽  
Yueqin Xu ◽  
Eugene Iwaniczko ◽  
Evan Williams ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
P Type
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