CHF3 and NH3 Additives for Reactive ion Etching of GaAs Using CCl2F2 and SICI4

1991 ◽  
Vol 240 ◽  
Author(s):  
Kuen-Sane Din ◽  
Gou-Chung Chi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Etching Process ◽  
Ion Etching ◽  
X Ray ◽  
Gaas Wafer ◽  
Self Bias

ABSTRACTTwo fundamental requirements for RIE are the formation of nearly volatile etch products and sufficiently high physical bombardment to remove all substances on the surface. In this study, the GaAs wafer was in-situ pretreated with NH3 or CHF3 plasma prior to actual etching process. The main etchants are CCl2F2 and SiCl4. By adding these additives to the main etch gases, the resulting etch performance was significantly affected. For instance, DC self-bias of CCl2F2 plasma is relatively low and can increase with such gas addition, thus the etching properties related to physical bombardment change too. CHF3 improve GaAs etch rate in CCl2F2through increasing concentration of reactive chlorine-containing species. While CHF3 enhance etch rate in SiCl4 plasma. The as etched samples were examined with X-ray photoelectron spectroscopy. Details of the experimental results will be described.

Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

2007 ◽  
Vol 124-126 ◽  
pp. 503-506
Author(s):  
N.J. Kim ◽  
S.Y. Lee ◽  
G.K. Lee ◽  
J.H. Moon ◽  
Byung Teak Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Smooth Surfaces ◽  
Ion Etching ◽  
X Ray ◽  
Inductively Coupled ◽  
Silica Glasses

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

In Situ Design of Experiments for A Reactive Ion Etching Process

1999 ◽  
Vol 569 ◽  
Author(s):  
Cecilia G. Galarza ◽  
Pete Klimecky ◽  
Pramod P. Khargonekar ◽  
Fred L. Terry
Keyword(s):  
Design Of Experiments ◽  
Plasma Etching ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Etching Process ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Ion Etching ◽  
Spatial Uniformity

ABSTRACTWe introduce a new procedure to perform a design of experiments (DOE) for plasma etching processes. In particular, we use in situ etch rate estimations to maximize the number of observable setpoints during a single run of the etching process. This procedure is applied to characterize the spatial uniformity of a plasma chamber used in the manufacturing of flat panel displays.

Effect of HCl+LiF Etching Process on Electrochemical Performance of Ti3C2

NANO ◽  
2020 ◽  
Vol 15 (05) ◽  
pp. 2050058
Author(s):  
Yuhua Huang ◽  
Weiwei Li ◽  
Bingchu Mei ◽  
Yu Yang ◽  
Zuodong Liu
Keyword(s):  
Electrochemical Performance ◽  
Photoelectron Spectroscopy ◽  
Lithium Fluoride ◽  
Specific Capacity ◽  
Etching Process ◽  
X Ray Diffraction ◽  
In Situ Oxidation ◽  
X Ray ◽  
Scanning Electron

In this paper, the effects of etching temperature and concentrations of hydrochloric acid (HCl) on the exfoliating process and the electrochemical performance of LIBs were systematically explored. The transformation from Ti3AlC2 to Ti3C2 was analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and Raman spectra. The suitable conditions of preparing Ti3C2 MXene though HCl and lithium fluoride (LiF) were obtained. Besides, the in-situ oxidation conditions of Ti3C2 during the etching process were studied. The TiO2/Ti3C2 was beneficial to improve the specific capacity from 125[Formula: see text]mAh[Formula: see text]g[Formula: see text] to 150[Formula: see text]mAh[Formula: see text]g[Formula: see text] at 1 C.

Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process

2018 ◽  
Vol 282 ◽  
pp. 83-87 ◽  
Author(s):  
Takashi Oinoue ◽  
Suguru Saito ◽  
Atsushi Okuyama ◽  
Yoshiya Hagimoto ◽  
Hayato Iwamoto
Keyword(s):  
Behavior Analysis ◽  
Photoelectron Spectroscopy ◽  
Etch Rate ◽  
Etching Process ◽  
The Other ◽  
X Ray ◽  
Single Spin ◽  
Other Hand ◽  
Si Wafer

The HF/HNO3mixture Si etching process is widely used to remove stress and damaged layers after Si wafer back grinding. Although there have been many reports on the dip process, there have been few detailed reports on the single-spin process. In a single spin process, Si etch rate distributions largely differ with different HF/HNO3concentrations. On the other hand, thermal SiO2etch rate distributions are similar even with different HF/HNO3concentrations. In this work, we analyzed Si surfaces with XPS (X-ray Photoelectron Spectroscopy) after processing various HF/HNO3mixture concentrations. SiOxstays steady in any wafer position and HNO3concentration, whereas SiO2thickens depending on HNO3concentration at the center. We assumed that Si etch rate distributions were caused by HF or HNO3consumption and confirmed this assumption was correct in a wafer center SiN cover experiment.

The Etching Reaction and Surface Reconstruction of Bismuth Zinc Niobate Thin Film in SF6/Ar Plasma

2013 ◽  
Vol 763 ◽  
pp. 28-32
Author(s):  
Shu Ya Wang ◽  
Yun Ying Fu ◽  
Li Ping Dai ◽  
Guo Jun Zhang
Keyword(s):  
Surface Reconstruction ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Pyrochlore Structure ◽  
Film Surface ◽  
Optimum Process ◽  
Ion Etching ◽  
X Ray ◽  
Bismuth Zinc Niobate ◽  
Ar Plasma

Reactive ion etching (RIE) of bismuth zinc niobate (BZN) thin films using an SF6/Ar plasma has been studied. An optimum process parameters was obtained according to the highest etch rate of 90nm/min. Under this etching condition, the crystal structural properties and surface morphology of the BZN film before and after etching were characterized using X-ray diffraction (XRD), the film showed a surface reconstruction after etching, a cubic pyrochlore structure orientation transition was observed from preferential (222) to (400), and ZnF2 phases were detected. The film surface was chemically analyzed by X-ray photoelectron spectroscopy (XPS) to investigate the reactive ion etching mechanism. A zinc-rich surface was formed because low-volatile ZnF2 residues were difficult to remove.

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