The Effect of Metal Masks on the Plasma Etch Rate of Silicon

1989 ◽  
Vol 136 (6) ◽  
pp. 1799-1804 ◽  
Author(s):  
Theodore H. Fedynyshyn ◽  
Gregory W. Grynkewich ◽  
Bomy A. Chen ◽  
T. P. Ma
Keyword(s):  
Etch Rate ◽  
Plasma Etch

Low k Film Etch in Applied Materials eMxP+ Chamber

1998 ◽  
Vol 544 ◽  
Author(s):  
Melissa Yu ◽  
Hongching Shan ◽  
Ashley Taylor
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Process Conditions ◽  
Plasma Etch ◽  
Absolute Value ◽  
Lower Dielectric Constant ◽  
Profile Control ◽  
Etch Stop ◽  
Anisotropic Etch ◽  
Low K

ABSTRACTThe materials with lower dielectric constant ( low k ) have been attracting attention recently because the low k material has the potential to be used in place of SiO2 in ULSI. In this work, we focused on evaluating organic low k material performance with plasma etch in the Applied Material's eMxP+ anisotropic etch chamber. The films studied were Dow Chemical BCB and Silk, Allied Signal Flare 2.0, and Du Pont FPI. The feature sizes of the wafer s were 0.25 to 1 micron trenches. Du Pont FPI resulted in the highest achieved etch rate of more than lum/min, followed by BCB, and Flare. The microloading study indicated that the etch rate microloading is less than 10% between lum and 0.25 urn feature sizes, which suggests that the chance of etch stop for a high aspect ratio features will be small. The profile could vary from bowing to vertical, to tapering by using different process conditions, mainly by temperature. The FP1 profile was more tapered than those of BCB and Flare when the same process was used to etch the same type of patterned wafer having these three different low k films. The detailed study showed that the trend of etch rate and profile for BCB and Flare film etch were similar, but that the absolute value for profile, as well as the trend of etch rate uniformity and profile were somewhat different. In conclusion, low k materials can be etched in AMAT traditional dielectric chamber (eMxP+) with a good etch rate and profile control.

Mask Dependent Etch Rates III: The Effect of a Silver Etch Mask on the Plasma Etch Rate of Silicon

1988 ◽  
Vol 135 (1) ◽  
pp. 268-269 ◽  
Author(s):  
T. H. Fedynyshyn ◽  
G. W. Grynkewich ◽  
R. H. Dumas
Keyword(s):  
Etch Rate ◽  
Plasma Etch ◽  
Etch Rates

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF4 mixture gas mixing ratio

2007 ◽  
Vol 4 (4) ◽  
pp. 1578-1580 ◽  
Author(s):  
A. Werbowy ◽  
P. Firek ◽  
J. Chojnowski ◽  
A. Olszyna ◽  
J. Szmidt ◽  
...  
Keyword(s):  
Thin Films ◽  
Barium Titanate ◽  
Etch Rate ◽  
Mixing Ratio ◽  
Gas Mixing ◽  
Rf Power ◽  
Plasma Etch

Hydrogen Diffusion Between Plasma-Deposited Silicon Nitridepolyimide Polymer Interfaces

1987 ◽  
Vol 108 ◽  
Author(s):  
Son Van Nguyen ◽  
Mike Kerbaugh
Keyword(s):  
Silicon Nitride ◽  
Depth Profile ◽  
Etch Rate ◽  
Hydrogen Diffusion ◽  
Annealing Treatment ◽  
Film Deposition ◽  
Nuclear Reaction Analysis ◽  
Nitride Film ◽  
Rate Variation ◽  
Plasma Etch

ABSTRACTA Nuclear Reaction Analysis (NRA) for Hydrogen technique was used to analyze the hydrogen concentration near Plasma Enchanced Chemical Vapor Deposition (PECVD) silicon nitride-polyimide interfaces at various nitride-deposition and polyimide-polymer-curing temperatures. The CF4 + O2 (8% O2) plasma-etch-rate variation of PECVD silicon nitride films deposited on polyimide appeared to correlate well with the variation of hydrogen-depth profiles in the nitride films. The NRA data indicate that hydrogen-depth-profile fluctuation in the nitride films is due to hydrogen diffusion between the nitride-polyimide interfaces during deposition. Annealing treatment of polyimide films in a hydrogen atmosphere prior to the nitride film deposition tends to enhance the hydrogen-depth-profile uniformity in the nitride films, and thus substantially reduces or eliminates variation in the nitride plasma-etch rate.

Evaluation of a silicon-containing benzocyclobutene thermoset resin as a plasma etch stop

1990 ◽  
Vol 5 (8) ◽  
pp. 1733-1738 ◽  
Author(s):  
Stephen R. Cain ◽  
Luis J. Matienzo ◽  
David W. Wang
Keyword(s):  
Etch Rate ◽  
Laser Interferometry ◽  
Thermosetting Resin ◽  
Plasma Etch ◽  
Thermoset Resin ◽  
Etch Stop

An experimental silicon-containing benzocyclobutene thermosetting resin from DOW has been evaluated for use as a plasma etch stop in packaging applications. The thermal and etch properties of this particular resin (DOW UX-13005.02L) make it suitable for use as an etch stop. Further, a model for in situ laser interferometry is proposed. By applying the model to the laser interferogram, the initial etch rate and amount of material removed before etching ceases may be determined.

Real-time determination of plasma etch-rate selectivity

1998 ◽  
Vol 7 (4) ◽  
pp. 581-589 ◽  
Author(s):  
Moshe Sarfaty ◽  
Chris Baum ◽  
Michael Harper ◽  
Noah Hershkowitz ◽  
J Leon Shohet
Keyword(s):  
Real Time ◽  
Etch Rate ◽  
Plasma Etch ◽  
Time Determination
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