Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer

1990 ◽  
Vol 137 (9) ◽  
pp. 2925-2927 ◽  
Author(s):  
M. Yamana ◽  
N. Kashiwazaki ◽  
A. Kinoshita ◽  
T. Nakano ◽  
M. Yamamoto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Electrochemical Treatment ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Silicon Oxide Layer

ChemInform Abstract: Porous Silicon Oxide Layer Formation by the Electrochemical Treatment of a Porous Silicon Layer.

ChemInform ◽  
1990 ◽  
Vol 21 (47) ◽  
Author(s):  
M. YAMANA ◽  
N. KASHIWAZAKI ◽  
A. KINOSHITA ◽  
T. NAKANO ◽  
M. YAMAMOTO ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Electrochemical Treatment ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Silicon Oxide Layer

Origin of Mosaic Structure Obtained During the Production of Porous Silicon with Electrochemical Etching

2019 ◽  
Vol 11 (12) ◽  
pp. 1218-1224
Author(s):  
Dao Tran Cao ◽  
Cao Tuan Anh ◽  
Luong Truc Quynh Ngan
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Current Density ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Mosaic Structure ◽  
Anodic Current Density ◽  
Anodic Current ◽  
Silicon Oxide Layer

So far, while producing porous silicon (PSi) with anodic etching of silicon in an aqueous solution of hydrofluoric acid, many researchers (including us) have obtained the crack-into-pieces (or mosaic) structure. Most of the authors believed that the cause of this structure is the collapse and the cracking of the porous, especially highly porous, silicon layer which took place during the drying of PSi after fabrication. However, our study showed that the mosaic structure was formed right during the course of silicon anodization at high anodic current density. Furthermore, our study also showed that at high anodic current density the real silicon etching has been replaced by the growth of a silicon oxide layer. This is a layer of another substance that grows on silicon, so when the layer is too thick (which is obtained when the anodic current density is too high and/or the anodization time is too long) it will crack, creating mosaic pieces. When the silicon oxide layer is cracked, the locations around the cracks will be etched more violently than elsewhere, creating trenches. Thus, the mosaic structure with mosaic pieces emerged between the trenches has formed.

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

Observation of Paramagnetic Silicon Dangling Orbitals in Luminescent Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
F. C. Rong ◽  
E. H. Poindexter ◽  
J. F. Harvey ◽  
D. C. Morton ◽  
R. A. Lux ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Skeletal Structure ◽  
Planar Surface ◽  
Paramagnetic Resonance ◽  
Wafer Substrate ◽  
Electron Paramagnetic ◽  
Annealing Experiments

ABSTRACTWe have detected two dominant paramagnetic centers in porous silicon by electron paramagnetic resonance (EPR). One of them is isotropic, assigned to a defect in amorphous silicon oxide in the porous silicon layer. The other is anisotropic, and is very much like a Pb center at a planar Si/SiO2 interface. This EPR center is unambiguously identified as an •Si≡Si3 moiety, a silicon with dangling orbital, back-bonded to three silicon atoms, by 29 Si hyperfine structure (HFS) associated with the dangling orbital, and 29 Si superHFS from three neighboring silicon atoms, as similarly observed in the usual planar surface Pb structure. The dangling orbitals are highly localized and heavily p character. The disposition of dangling orbitals is evidence that the skeletal structure of luminescent porous silicon is crystalline and has a lattice which is aligned and continuous with the wafer substrate. The possibility that these centers are the major photoluminescent killers or quenchers is not supported by our hydrogen annealing experiments.

scholarly journals Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

2018 ◽  
Vol 80 ◽  
pp. 30-39
Author(s):  
Hasan A Hadi
Keyword(s):  
Porous Silicon ◽  
Optical Microscopy ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Diffraction Peak ◽  
Etching Time ◽  
Layer Formation ◽  
Xrd Patterns

In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns show that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.

Influence of Intrinsic Silicon Layer and Intermediate Silicon Oxide Layer on the Performance of Inline PECVD Deposited Boron-Doped TOPCon

2021 ◽  
pp. 1-8
Author(s):  
Angelika Harter ◽  
Jana-Isabelle Polzin ◽  
Leonard Tutsch ◽  
Jan Temmler ◽  
Marc Hofmann ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Layer ◽  
Silicon Oxide Layer ◽  
Boron Doped

Effect of the Porous Silicon Layer Structure on Gas Adsorption

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gas Adsorption ◽  
Layer Structure ◽  
Silicon Layer ◽  
Porous Silicon Layer
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