scholarly journals Effects of Heat‐Treatments on Electrical Properties of Boron‐Doped Silicon Crystals

1990 ◽  
Vol 137 (11) ◽  
pp. 3642-3647 ◽  
Author(s):  
Y. Kamiura ◽  
F. Hashimoto ◽  
M. Yoneta
Keyword(s):  
Electrical Properties ◽  
Heat Treatments ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

1989 ◽  
Vol 4 (1-4) ◽  
pp. 147-151 ◽  
Author(s):  
A. Henry ◽  
O.O. Awadelkarim ◽  
J.L. Lindström ◽  
G.S. Oehrlein
Keyword(s):  
Electrical Properties ◽  
Deuterium Plasma ◽  
Boron Doped ◽  
Plasma Treatments ◽  
Doped Silicon

Oxygen precipitation in heavily boron‐doped silicon crystals

1987 ◽  
Vol 51 (11) ◽  
pp. 849-851 ◽  
Author(s):  
H. L. Tsai ◽  
A. E. Stephens ◽  
F. O. Meyer
Keyword(s):  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Boron Doped ◽  
Doped Silicon

Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1370-1374 ◽  
Author(s):  
Jeong-Min Kim ◽  
Joon-Young Choi ◽  
Hyon-Jong Cho ◽  
Hong-Woo Lee ◽  
Hak-Do Yoo
Keyword(s):  
Thermally Induced ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon ◽  
Induced Defects

Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

2009 ◽  
Vol 95 (16) ◽  
pp. 162101 ◽  
Author(s):  
Ruth A. Schlitz ◽  
Daniel E. Perea ◽  
Jessica L. Lensch-Falk ◽  
Eric R. Hemesath ◽  
Lincoln J. Lauhon
Keyword(s):  
Electrical Properties ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

1999 ◽  
Vol 48 (1-4) ◽  
pp. 383-386 ◽  
Author(s):  
I.V. Antonova ◽  
V.P. Popov ◽  
V.F. Stas ◽  
A.K. Gutakovskii ◽  
A.E. Plotnikov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Boron Doped ◽  
Doped Silicon

Oxygen concentration in Czochralski silicon crystals depending on silicon monoxide evaporation from boron doped silicon melts

1998 ◽  
Vol 192 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Susumu Maeda ◽  
Keisei Abe ◽  
Masaki Kato ◽  
Hideo Nakanishi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Silicon Monoxide ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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