Oxygen precipitation in heavily boron‐doped silicon crystals

1987 ◽  
Vol 51 (11) ◽  
pp. 849-851 ◽  
Author(s):  
H. L. Tsai ◽  
A. E. Stephens ◽  
F. O. Meyer
Keyword(s):  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Boron Doped ◽  
Doped Silicon

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

Behavior of Thermally Induced Defects in Heavily Boron-Doped Silicon Crystals

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1370-1374 ◽  
Author(s):  
Jeong-Min Kim ◽  
Joon-Young Choi ◽  
Hyon-Jong Cho ◽  
Hong-Woo Lee ◽  
Hak-Do Yoo
Keyword(s):  
Thermally Induced ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon ◽  
Induced Defects

Enhanced Oxygen Precipitation during the Czochralski Crystal Growth

2007 ◽  
Vol 131-133 ◽  
pp. 167-174 ◽  
Author(s):  
Lukas Válek ◽  
Jan Šik ◽  
David Lysáček
Keyword(s):  
Crystal Growth ◽  
Vacancy Concentration ◽  
Stacking Faults ◽  
Czochralski Crystal Growth ◽  
Oxygen Precipitation ◽  
Large Size ◽  
Boron Doped ◽  
Doped Silicon ◽  
High Boron ◽  
Oxygen Precipitates

An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.

Oxygen precipitation in heavily boron-doped silicon

1991 ◽  
Vol 24 (5) ◽  
pp. 576-580 ◽  
Author(s):  
S. Gupta ◽  
S. Messoloras ◽  
J. R. Schneider ◽  
R. J. Stewart ◽  
W. Zulehner
Keyword(s):  
Oxygen Precipitation ◽  
Boron Doped ◽  
Doped Silicon

Oxygen concentration in Czochralski silicon crystals depending on silicon monoxide evaporation from boron doped silicon melts

1998 ◽  
Vol 192 (1-2) ◽  
pp. 117-124 ◽  
Author(s):  
Susumu Maeda ◽  
Keisei Abe ◽  
Masaki Kato ◽  
Hideo Nakanishi ◽  
Keigo Hoshikawa ◽  
...  
Keyword(s):  
Oxygen Concentration ◽  
Silicon Monoxide ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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