Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

2013 ◽  
Vol 270 ◽  
pp. 428-431 ◽  
Author(s):  
Junjun Huang ◽  
Yuheng Zeng ◽  
Ruiqin Tan ◽  
Weiyan Wang ◽  
Ye Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Silicon Nanocrystal ◽  
Sio2 Matrix ◽  
Boron Doped ◽  
Structural And Electrical Properties ◽  
Doped Silicon

Effect of substrate temperature on the structural and electrical properties of La and Mn co-doped BiFeO3 thin films

2016 ◽  
Vol 619 ◽  
pp. 308-316 ◽  
Author(s):  
Jayant Kolte ◽  
A.S. Daryapurkar ◽  
Mohit Agarwal ◽  
D.D. Gulwade ◽  
P. Gopalan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Bifeo3 Thin Films ◽  
Structural And Electrical Properties ◽  
Co Doped

Structural and Electrical Properties of Thermally Annealed InN Thin Films on Native and Ain-Nucleated (00.1) Sapphire

1993 ◽  
Vol 317 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden ◽  
M. E. Hawley
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Substrate Temperature ◽  
Reactive Magnetron ◽  
Structural And Electrical Properties ◽  
Highly Strained ◽  
Strained Films ◽  
Surface Decomposition ◽  
Deposited Films ◽  
Anneal Time

ABSTRACTThe effects of thermal annealing at 400°C in 5 MTorr of N2 on the structural and electrical properties of thin films of InN grown at 100°C on native and AIN-nucleated (00.1) sapphire by reactive magnetron sputtering have been studied. The variations in the properties of the two sets of films have qualitatively similar, yet quantitatively different dependencies on anneal time. In each case, surface decomposition to give (101) textured rods of elemental indium is seen at short anneal times, and markedly so in the more highly strained films on the AIN-nucleated substrates. The electrical properties in both cases improve with annealing time, yielding a Hall Mobility that is enhanced 2–3 times relative to as-deposited films and similar to that for films grown at a substrate temperature of 400°C. The evolution of the electrical properties appears to be relatively insensitive to the surface decomposition and to largely reflect the nature of the bulk InN Matrix.

Sign in / Sign up

Export Citation Format

Share Document