Electrical Properties of Near-Degenerate Boron-Doped Silicon

1955 ◽  
Vol 100 (4) ◽  
pp. 1075-1078 ◽  
Author(s):  
R. O. Carlson
Keyword(s):  
Electrical Properties ◽  
Boron Doped ◽  
Doped Silicon

Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon

1989 ◽  
Vol 4 (1-4) ◽  
pp. 147-151 ◽  
Author(s):  
A. Henry ◽  
O.O. Awadelkarim ◽  
J.L. Lindström ◽  
G.S. Oehrlein
Keyword(s):  
Electrical Properties ◽  
Deuterium Plasma ◽  
Boron Doped ◽  
Plasma Treatments ◽  
Doped Silicon

Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

2009 ◽  
Vol 95 (16) ◽  
pp. 162101 ◽  
Author(s):  
Ruth A. Schlitz ◽  
Daniel E. Perea ◽  
Jessica L. Lensch-Falk ◽  
Eric R. Hemesath ◽  
Lincoln J. Lauhon
Keyword(s):  
Electrical Properties ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

Splitting and electrical properties of the SOI structure formed from the heavily boron doped silicon with using of the smart-cut technology

1999 ◽  
Vol 48 (1-4) ◽  
pp. 383-386 ◽  
Author(s):  
I.V. Antonova ◽  
V.P. Popov ◽  
V.F. Stas ◽  
A.K. Gutakovskii ◽  
A.E. Plotnikov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Boron Doped ◽  
Doped Silicon

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation

2021 ◽  
pp. 1-1
Author(s):  
Hung-Yuan Chang ◽  
Yew-Chung Sermon Wu ◽  
Chia-He Chang ◽  
Kun-Lin Lin ◽  
Abhijeet Joshi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Shallow Junction ◽  
Depth Profiles ◽  
Nano Scale ◽  
Doped Silicon ◽  
Phosphorus Doped
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