Enhanced Etching of Group III–V Semiconductors by Oscillating with Sputter Etching and Reactive Ion Etching

1991 ◽  
Vol 138 (4) ◽  
pp. 1143-1146 ◽  
Author(s):  
Alexandros T. Demos ◽  
H. Scott Fogler ◽  
Hossein Etemad‐Moghadam ◽  
Michael E. Elta
Keyword(s):  
Reactive Ion Etching ◽  
Group Iii V Semiconductors ◽  
Ion Etching ◽  
Group Iii ◽  
Sputter Etching

Magnetron reactive ion etching of group III‐nitride ternary alloys

1996 ◽  
Vol 14 (3) ◽  
pp. 1046-1049 ◽  
Author(s):  
G. F. McLane ◽  
T. Monahan ◽  
D. W. Eckart ◽  
S. J. Pearton ◽  
C. R. Abernathy
Keyword(s):  
Reactive Ion Etching ◽  
Ternary Alloys ◽  
Ion Etching ◽  
Group Iii ◽  
Group Iii Nitride

Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

1984 ◽  
Vol 38 ◽  
Author(s):  
Ch. Steinbruchel ◽  
H. W. Lehmann ◽  
K. Frick
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Ion Density ◽  
Ion Beam Etching ◽  
Plasma Species ◽  
Parallel Plate Reactor ◽  
Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

Enhanced etching of InP by cycling with sputter etching and reactive ion etching

1991 ◽  
Author(s):  
Alexandros T. Demos ◽  
H. S. Fogler ◽  
Stella W. Pang ◽  
Michael E. Elta
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Sputter Etching

Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures

1988 ◽  
Vol 144 ◽  
Author(s):  
A. Fathimulla ◽  
T. Loughran ◽  
J. Bates
Keyword(s):  
Vapor Pressure ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Indium Chloride ◽  
Ion Etching ◽  
Group Iii ◽  
Argon Mixture ◽  
Organometallic Group

Dry etching of indium-based III–V materials in chlorine-based gases is difficult because of the low vapor pressure of the indium chloride by-product. Recently, reactive ion etching of InP(1,2), and GaAs(3,4) using methane, hydrogen and argon mixture in which volatile organometallic group III compounds are formed has been employed. In this paper, we report the reactive ion etching of indium-based materials using CH4:H2:Ar and SiCl4:Ar mixtures.

The Role of F Atoms in the Reactive Sputter Etching of Silicon Dioxide: Langmuir Probe and Optical Actinometry Measurements

1986 ◽  
Vol 76 ◽  
Author(s):  
C H. Steinbrüchel ◽  
B. J. Curtis
Keyword(s):  
Silicon Dioxide ◽  
Langmuir Probe ◽  
Constant Pressure ◽  
Reactive Ion Etching ◽  
Ion Flux ◽  
The Other ◽  
Ion Fluxes ◽  
Ion Etching ◽  
Sputter Etching

ABSTRACTReactive sputter etching of SiO2 in a low-pressure CF4 -O2 plasma has been investigated using a Langmuir probe to determine ion fluxes to the substrate and optical actinometry to monitor the concentration of F atoms, [F]. Etch yields Y, i.e. the number of substrate atoms removed per impinging ion, are obtained vs O2 composition and vs pressure. At constant pressure Y decreases slightly, but [F] increases considerably, with increasing O2 content. On the other hand, at constant O2 composition both Y and [F] increase strongly with increasing pressure. These results suggest that at low [F], relative to the ion flux to the substrate, the dominant etch mechanism is direct reactive ion etching, with the ions themselves as the main reactants, whereas at high [F] the overall etching is ion-enhanced, with F atoms as the main neutral reactants.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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