Initial growth mechanism of a/b‐axis oriented YBa2Cu3O7−y film prepared by liquid phase epitaxy

1996 ◽  
Vol 68 (14) ◽  
pp. 2002-2004 ◽  
Author(s):  
Tasuku Kitamura ◽  
Izumi Hirabayashi ◽  
Shoji Tanaka ◽  
Yoshihro Sugawara ◽  
Yuichi Ikuhara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Initial Growth Mechanism of Sm1+xBa2-xCu3Oy Film Prepared by Liquid Phase Epitaxy

1999 ◽  
pp. 745-748
Author(s):  
Akemi Hayashi ◽  
Kazuomi Kakimoto ◽  
Yuichi Ishida ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Initial growth mechanism of YBCO films in liquid phase epitaxy process

2000 ◽  
Vol 334 (3-4) ◽  
pp. 249-258 ◽  
Author(s):  
K Kakimoto ◽  
Y Sugawara ◽  
T Izumi ◽  
Y Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth ◽  
Ybco Films

scholarly journals Initial Growth Mechanism of YBa2Cu3Oy/MgO Film by Liquid Phase Epitaxy

2001 ◽  
Vol 65 (3) ◽  
pp. 175-178
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Initial Growth

Initial growth mechanism of Yba2Cu3Oycrystal on MgO substrate by liquid-phase epitaxy

2001 ◽  
Vol 16 (10) ◽  
pp. 2947-2958 ◽  
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
Yuh Shiohara
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Slope Angle ◽  
Growth Time ◽  
Initial Growth ◽  
Homoepitaxial Growth ◽  
Partial Dissolution ◽  
Mgo Surface ◽  
Mgo Substrate

Initial growth features of Yba2Cu3Oy (YBCO) crystal on an MgO substrate by a liquid-phase epitaxy (LPE) process were investigated and compared with homoepitaxial growth on a YBCO substrate. The partial dissolution of the seed grains in the initial stage of the LPE growth was influenced by the crystallinity of in-plane alignment of the seed grains, which could be explained by the preferential dissolution and growth mechanism. Concurrently, the slope angle of the growth grain varied with growth time. The opposite tendency of the slope angle change between the hetero- and the homoepitaxial growth was observed and could be explained by considering the difference in the step-advancing rates on each interface. It could be understood that the formation of entrapped liquid inclusions was the combination phenomena of both the small step-advancing rate of YBCO crystal on the MgO surface and the roughening of the MgO surface due to the partial dissolution of MgO to the solution.

Growth mechanism of RE-Ba–Cu–O film on MgO substrate by liquid phase epitaxy

2001 ◽  
Vol 357-360 ◽  
pp. 1377-1381 ◽  
Author(s):  
K. Nomura ◽  
S. Hoshi ◽  
X. Yao ◽  
Y. Nakamura ◽  
T. Izumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Mgo Substrate

Growth mechanism of thick c-axis oriented YBa2Cu3O7 − y films prepared by liquid phase epitaxy

1996 ◽  
Vol 158 (1-2) ◽  
pp. 61-67 ◽  
Author(s):  
T. Kitamura ◽  
S. Taniguchi ◽  
Y. Shiohara ◽  
I. Hirabayashi ◽  
S. Tanaka ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy

Growth Mechanism of RE-Ba-Cu-O Crystal by Liquid Phase Epitaxy Process

2000 ◽  
Vol 659 ◽  
Author(s):  
K. Nomura ◽  
S. Hoshi ◽  
X. Yao ◽  
Y. Nakamura ◽  
T. Izumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Slope Angle ◽  
Slow Step ◽  
Initial Stage ◽  
The Difference ◽  
Mgo Surface ◽  
Mgo Substrate ◽  
Opposite Tendency

ABSTRACTGrowth of YBa2Cu3Oy (YBCO) crystals both on the MgO and the YBCO substrates has been investigated in order to clarify the growth mechanism of the liquid phase epitaxy (LPE) process for the coated conductor. It was found that the slope angle of the growth grain varied with growing in the initial stage of the LPE growth. In the case of the MgO substrate, the slope angle increased with laterally growing the crystal. On the other hand, the slope angle decreased with growing the crystal in the case of the YBCO substrate. This phenomenon with the opposite tendency could be explained by considering the difference in the step-advancing rates between on the MgO and the YBCO surfaces. It was found that the deep and steep valley of the LPE grains due to the slow step-advancing rate on the MgO is the origin of the flux trapping inclusions. It is necessary that the seed films should cover the entire MgO surface without undesired orientation grains and impurity particles in order to obtain the high quality LPE layer.

Preferential growth mechanism of REBa2Cu3Oy (RE = Y, Nd) crystal on MgO substrate by liquid phase epitaxy

2001 ◽  
Vol 16 (4) ◽  
pp. 979-989 ◽  
Author(s):  
Katsumi Nomura ◽  
Saburo Hoshi ◽  
Xin Yao ◽  
Kazuomi Kakimoto ◽  
Yuichi Nakamura ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Growth Mechanism ◽  
Liquid Phase Epitaxy ◽  
Coulomb Force ◽  
Preferential Growth ◽  
Lattice Matching ◽  
Interfacial Energies ◽  
Calculation Results ◽  
The Difference ◽  
Good Agreement

Growth of the REBa2Cu3Oy (REBCO, RE = Y, Nd) crystals on the MgO substrates by the liquid phase epitaxy (LPE) process was investigated to clarify the growth mechanism. The crystal orientation of in-plane alignment was improved during the LPE process due to the preferential dissolution and growth even from a polycrystalline seed film. The orientation of preferential growth depended on the kind of RE for the REBCO system. The phenomena could be explained by the coarsening model by introducing the difference in the interfacial energies, which were considered not only general lattice matching but the Coulomb force at the interface between the REBCO and the MgO crystals. The preferential growth model was developed, and the calculation results showed a good agreement with the experimental results.

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