The Effect of the Crystal Grown‐in Defects on the Pause Tail Characteristics of Megabit Dynamic Random Access Memory Devices

1994 ◽  
Vol 141 (7) ◽  
pp. 1872-1878 ◽  
Author(s):  
Sun S. Kim ◽  
W. Wijaranakula
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 925-929 ◽  
Author(s):  
Jae Jeong Kim ◽  
Jun Yong Kim ◽  
Chae Ho Jeong ◽  
Nae Hak Park ◽  
Sang Bum Han ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Dynamic Random Access Memory Devices Based on Functionalized Copolymers with Pendant Hydrazine Naphthalimide Group

2011 ◽  
Vol 115 (16) ◽  
pp. 8288-8294 ◽  
Author(s):  
Hua Li ◽  
Najun Li ◽  
Ru Sun ◽  
Hongwei Gu ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Electrical properties of paraelectric (Pb,La)(Nb,Ti)O3 thin films for dynamic random access memory devices

1996 ◽  
Vol 68 (6) ◽  
pp. 764-766 ◽  
Author(s):  
Su Jae Lee ◽  
Chae Ryong Cho ◽  
Min Soo Kang ◽  
Min Su Jang ◽  
Kwang Yong Kang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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