Electrical properties of paraelectric (Pb,La)(Nb,Ti)O3 thin films for dynamic random access memory devices

1996 ◽  
Vol 68 (6) ◽  
pp. 764-766 ◽  
Author(s):  
Su Jae Lee ◽  
Chae Ryong Cho ◽  
Min Soo Kang ◽  
Min Su Jang ◽  
Kwang Yong Kang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Analysis of the Use of Molecular Resonant Tunneling Diodes for Local Refresh of Dynamic Random Access Memory Cells

2001 ◽  
Vol 679 ◽  
Author(s):  
Jonas Berg ◽  
Stefan Bengtsson ◽  
Per Lundgren
Keyword(s):  
Electrical Properties ◽  
Resonant Tunneling ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Storage Capacitor ◽  
Resonant Tunneling Diodes ◽  
Memory Cells ◽  
Access Memory ◽  
Tunneling Diodes

ABSTRACTSimulations have been made to analyze the use of molecular resonant tunneling diodes for local refresh of DRAM (Dynamic Random Access Memory) cells. Local refresh can be provided by a latch consisting of a pair of resonant tunneling diodes connected to the storage capacitor of the cell. Such a solution would significantly reduce the standby power consumption of the DRAM cell. We have compared the requirements on the resonant tunneling diodes for proper refresh operation with the electrical properties of published molecules with resonant IV-curves. The simulations show that no molecules with resonant electrical properties published so far in the literature have properties making them useful for this particular application. This is true also for low temperature operation. The issues of maximum tolerable series resistance and of maximum tolerable fluctuations in the number of attached molecules have also been addressed. Our results show that the focus for development of molecules with resonant electrical properties should be to find molecules with resonance for lower applied voltages and lower current levels than the molecules published so far. If the synthesis of new molecules with attractive properties is successful the merging of silicon technology and molecular electronics, for instance for new generations of DRAM cells, is a realistic future path of microelectronics.

(Ba,Sr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications

1999 ◽  
Vol 74 (21) ◽  
pp. 3194-3196 ◽  
Author(s):  
B. Nagaraj ◽  
T. Sawhney ◽  
S. Perusse ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Low Temperature Method for Enhancing Ferroelectric Thin Films in Non-Volatile Random Access Memory Devices

2011 ◽  
Vol 239-242 ◽  
pp. 2628-2631 ◽  
Author(s):  
Ming Chang Kuan ◽  
Kai Huang Chen ◽  
Wen Cheng Tzou ◽  
Chien Min Cheng ◽  
Yi Jun Lin
Keyword(s):  
Thin Films ◽  
Carbon Dioxide ◽  
Electrical Properties ◽  
Low Temperature ◽  
Oxygen Vacancy ◽  
Random Access ◽  
Random Access Memory ◽  
Ferroelectric Thin Films ◽  
Access Memory ◽  
Temperature Method

In this study, the electrical properties of as-deposited Sr0.4Ba0.6Nb2O6(SBN) ferroelectric thin films on SiO2/Si(100) substrates were improved by low temperature supercritical carbon dioxide fluid (SCF) process treatment. The as-deposited SBN ferroelectric thin films were treated by SCF process which mixed with pure H2O and propyl alcohol. After SCF process treatment, the memory windows increased in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were obtained. In addition, the improvement properties of as-deposited SBN thin films after SCF process treatment were found by XPS, C-V, and J-E measurement. Finally, the mechanism concerning the dependence of electrical properties of the SBN ferroelectric thin films on the SCF process was discussed.

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