Effect of Initial High Temperature Annealing and Gettering Processes on the Refresh Time of High Density Dynamic Random Access Memory Devices

1995 ◽  
Vol 142 (10) ◽  
pp. 3534-3538
Author(s):  
S. S. Kim ◽  
W. R. McKee ◽  
M. F. Pas ◽  
W. Wijaranakula
Keyword(s):  
High Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
High Temperature Annealing ◽  
Access Memory ◽  
Density Dynamic

Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 925-929 ◽  
Author(s):  
Jae Jeong Kim ◽  
Jun Yong Kim ◽  
Chae Ho Jeong ◽  
Nae Hak Park ◽  
Sang Bum Han ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Dynamic Random Access Memory Devices Based on Functionalized Copolymers with Pendant Hydrazine Naphthalimide Group

2011 ◽  
Vol 115 (16) ◽  
pp. 8288-8294 ◽  
Author(s):  
Hua Li ◽  
Najun Li ◽  
Ru Sun ◽  
Hongwei Gu ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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