Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices

1999 ◽  
Vol 46 (5) ◽  
pp. 940-946 ◽  
Author(s):  
Daewon Ha ◽  
Changhyun Cho ◽  
Dongwon Shin ◽  
Gwan-Hyeob Koh ◽  
Tae-Young Chung ◽  
...  
Keyword(s):  
Leakage Current ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Corrosion in Aluminum Chemical Mechanical Planarization for Sub-Quarter-Micron Dynamic Random Access Memory Devices

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 925-929 ◽  
Author(s):  
Jae Jeong Kim ◽  
Jun Yong Kim ◽  
Chae Ho Jeong ◽  
Nae Hak Park ◽  
Sang Bum Han ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Dynamic Random Access Memory Devices Based on Functionalized Copolymers with Pendant Hydrazine Naphthalimide Group

2011 ◽  
Vol 115 (16) ◽  
pp. 8288-8294 ◽  
Author(s):  
Hua Li ◽  
Najun Li ◽  
Ru Sun ◽  
Hongwei Gu ◽  
Jianfeng Ge ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Analysis of DRAM Standby Current Failure due to Hot Electron Induced Punch-through (HEIP) of PMOS transistor

2005 ◽  
Author(s):  
M. H. Cho ◽  
Y. I. Kim ◽  
J. Choi ◽  
D. S. Woo ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Leakage Current ◽  
Current Source ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Hot Electron ◽  
Access Memory ◽  
Hot Carrier ◽  
Pmos Transistor ◽  
Hot Carrier Degradation

Abstract A standby current failure of the 80nm design-ruled Dynamic Random Access Memory (DRAM) during burn-in stress was investigated. In our case, hot electron induced punch-through (HEIP) of a PMOS transistor was a leakage current source. The bake test is a useful method to identify the mechanism of a standby current failure due to hot carrier degradation.

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