High performance of novel oxygen diffusion barrier materials for future high-density dynamic random access memory devices

2002 ◽  
Vol 49 (11) ◽  
pp. 1917-1927 ◽  
Author(s):  
Dong-Soo Yoon ◽  
Jae Sung Roh
Keyword(s):  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
High Density ◽  
Memory Devices ◽  
Access Memory ◽  
Barrier Materials ◽  
Density Dynamic

Electrodes and Barriers for Dram and Feram: Processing, Integration, and Fundamentals

2000 ◽  
Vol 655 ◽  
Author(s):  
K.L. Saenger ◽  
P.C. Andricacos ◽  
S.D. Athavale ◽  
J.D. Baniecki ◽  
C. Cabral ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Random Access ◽  
Random Access Memory ◽  
X Ray Diffraction ◽  
Oxide Electrode ◽  
Access Memory ◽  
X Ray ◽  
Barrier Materials ◽  
The Stability ◽  
Density Dynamic

AbstractMaterials requirements for electrodes and barriers in high density dynamic random access memory (DRAM) and ferroelectric random access memory (FERAM) are reviewed, and some approaches to barrier materials and device geometries are described. Electrode/barrier topics covered in more detail include Pt reactivity with Si-containing barriers and dielectric overlayers, the application of a Bragg-Brentano x-ray diffraction technique to quantitatively probe Pt and Ir electrode morphology and thickness changes during ferroelectric processing, the stability of metal oxide electrode materials in reducing ambients, electrode patterning techniques (including Pt electroplating), and electrical properties of 3-D capacitors in 256k arrays as a function of top electrode annealing treatments.

High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient

Nanoscale ◽  
2021 ◽  
Author(s):  
Tariq Aziz ◽  
Shi-Jing Wei ◽  
Yun Sun ◽  
Lai-Peng Ma ◽  
Songfeng Pei ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Layer ◽  
Homogeneous Oxidation

The conventional strategy of fabricating resistive random access memory (RRAM) based on graphene oxide is limited to a resistive layer with homogeneous oxidation, and the switching behavior relies on its...

Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films for High Density Dynamic Random Access Memory Capacitors

1999 ◽  
Vol 38 (Part 2, No. 2B) ◽  
pp. L195-L198 ◽  
Author(s):  
Jae-Hyun Joo ◽  
Jong-Bum Park ◽  
Younsoo Kim ◽  
Kong-Soo Lee ◽  
Jun-Sik Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Random Access ◽  
Chemical Vapor ◽  
Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Density Dynamic
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