Electrical Characteristics and Annealing Study of Boron‐Doped Polycrystalline Diamond Films

1995 ◽  
Vol 142 (12) ◽  
pp. L223-L225 ◽  
Author(s):  
Sheng‐Hsiung Chen ◽  
Shen‐Li Chen ◽  
Ming‐Hsing Tsai ◽  
J. J. Shyu ◽  
Chia‐Fu Chena
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Annealing Study

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Electrical Properties of Homoepitaxial Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Diamond Surface ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Process Formation ◽  
Conductive State

ABSTRACTWe describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

1996 ◽  
Vol 79 (5) ◽  
pp. 2535-2541 ◽  
Author(s):  
M. Werner ◽  
C. Johnston ◽  
P. R. Chalker ◽  
S. Romani ◽  
I. M. Buckley‐Golder
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Electrical Characterization ◽  
Polycrystalline Diamond ◽  
Boron Doped

Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1636-1639 ◽  
Author(s):  
Yiben Xia ◽  
Takashi Sekiguchi ◽  
Wenjun Zhang ◽  
Xin Jiang ◽  
Jianhua Ju ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Dc Bias

Investigation of the Field Emission Current from Polycrystalline Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
J. W. Glesener ◽  
A. A. Morrish
Keyword(s):  
Field Emission ◽  
Electron Tunneling ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Emission Current ◽  
Tunneling Mechanism ◽  
Boron Doped ◽  
Field Emission Current ◽  
Thermal Stability Of

AbstractThe field emission current from boron doped polycrystalline diamond films was characterized as a function of voltage and temperature. The motivation for the current-temperature measurements was to assess the thermal stability of the diamond emitters and gain some insight into a possible emission mechanism.Results from the current-temperature (I-T) measurements found that the field emission current appeared independent of temperature. The best characterization of the results implied a temperature independent electron tunneling mechanism if not electron emission from the valence band of diamond.

Very low resistivity AlSi ohmic contacts to boron-doped polycrystalline diamond films

1994 ◽  
Vol 3 (4-6) ◽  
pp. 983-985 ◽  
Author(s):  
M. Werner ◽  
O. Dorsch ◽  
H.U. Baerwind ◽  
A. Ersoy ◽  
E. Obermeier ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Low Resistivity ◽  
Boron Doped

Magnetoresistance of boron-doped chemical vapor deposition polycrystalline diamond films

2002 ◽  
Vol 11 (1) ◽  
pp. 49-52 ◽  
Author(s):  
Y.J Fei ◽  
D Yang ◽  
Xue Wang ◽  
Q.B Meng ◽  
Xuejin Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped

Dry etching of undoped and boron doped polycrystalline diamond films

1995 ◽  
Vol 4 (4) ◽  
pp. 456-459 ◽  
Author(s):  
O. Dorsch ◽  
M. Werner ◽  
E. Obermeier
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Dry Etching ◽  
Boron Doped

scholarly journals Особенности характеристик солнечно-слепых электронно-оптических преобразователей с алмазными фотокатодами

2021 ◽  
Vol 47 (9) ◽  
pp. 3
Author(s):  
В.А. Беспалов ◽  
Э.А. Ильичёв ◽  
И.П. Казаков ◽  
Г.А. Кирпиленко ◽  
А.И. Козлитин ◽  
...  
Keyword(s):  
Spectral Range ◽  
Electron Flow ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Image Converter ◽  
Sapphire Substrates ◽  
Boron Doped ◽  
Solar Blind ◽  
Blind Image ◽  
First Time

The results of investigations of solar-blind image converter tubes (ICTs), sensitive in the ultraviolet spectral range are presented. Photocathodes sensitive layers of the ICT are based on boron-doped polycrystalline diamond films were grown up on sapphire substrates for the first time. Spectral range of the ICT sensitivity is 180…250 nm, the threshold sensitivity value without the electron flow multiplier ~ 10-9 W/Hz0.5 and spectral sensitivity ~ 12 - 15 mA/W.

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