Electrical Properties of Homoepitaxial Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. W. Hatfield ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Ohmic Contacts ◽  
Schottky Diodes ◽  
Diamond Films ◽  
Diamond Surface ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Process Formation ◽  
Conductive State

ABSTRACTWe describe the electrical characteristics of boron doped homoepitaxial diamond films fabricated using a plasma assisted CVD process, formation of ohmic contacts, high temperature (580°C) Schottky diodes, and a rudimentary diamond MESFET. We also report reversible changes of the conductive state of the diamond surface by various surface treatments for both natural and thin-film diamonds.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

2014 ◽  
Vol 1634 ◽  
Author(s):  
Luana S. Araujo ◽  
Olivia Berengue ◽  
Maurício Baldan ◽  
Neidenei Ferreira ◽  
João Moro ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Diamond Surface ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Capacitance Voltage ◽  
Surface Adsorbates ◽  
P Type

ABSTRACTDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

Electrical Characteristics and Annealing Study of Boron‐Doped Polycrystalline Diamond Films

1995 ◽  
Vol 142 (12) ◽  
pp. L223-L225 ◽  
Author(s):  
Sheng‐Hsiung Chen ◽  
Shen‐Li Chen ◽  
Ming‐Hsing Tsai ◽  
J. J. Shyu ◽  
Chia‐Fu Chena
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Electrical Characteristics ◽  
Boron Doped ◽  
Annealing Study

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamond

1987 ◽  
Vol 8 (8) ◽  
pp. 341-343 ◽  
Author(s):  
M.W. Geis ◽  
D.D. Rathman ◽  
D.J. Ehrlich ◽  
R.A. Murphy ◽  
W.T. Lindley
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Point Contact ◽  
Boron Doped Diamond ◽  
Boron Doped

Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films

1988 ◽  
Vol 53 (7) ◽  
pp. 586-588 ◽  
Author(s):  
G. Sh. Gildenblat ◽  
S. A. Grot ◽  
C. R. Wronski ◽  
A. R. Badzian ◽  
T. Badzian ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Chemical Vapor Deposited

Thin Film Multichip Packaging for High Temperature Digital Electronics

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000039-000045 ◽  
Author(s):  
Kun Fang ◽  
Rui Zhang ◽  
Tami Isaacs-Smith ◽  
R. Wayne Johnson ◽  
Emad Andarawis ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Integrated Circuits ◽  
Flip Chip ◽  
Coefficient Of Thermal Expansion ◽  
Electrical Characteristics ◽  
Passive Components ◽  
Interlayer Dielectric ◽  
Base Ceramic ◽  
Film Substrate

Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of temperature were measured. Thermocompression flip chip bonding of Au stud bumped SiC die was used for electrical connection of the digital die to the thin film substrate metallization. Since polymer underfills are not compatible with 300°C operation, AlN was used as the base ceramic substrate to minimize the coefficient of thermal expansion mismatch between the SiC die and the substrate. Initial die shear results are presented.

High temperature Schottky diodes with boron-doped homoepitaxial diamond base

1990 ◽  
Vol 25 (1) ◽  
pp. 129-134 ◽  
Author(s):  
G.Sh. Gildenblat ◽  
S.A. Grot ◽  
C.W. Hatfield ◽  
C.R. Wronski ◽  
A.R. Badzian ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Diodes ◽  
Boron Doped

scholarly journals Fabrication of Structured Boron-Doped Diamond Films for Electrochemical Applications

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 984
Author(s):  
Tibor Ižák ◽  
Ondrej Szabó ◽  
Pavla Štenclová ◽  
Štěpán Potocký ◽  
Vlastimil Vyskočil ◽  
...  
Keyword(s):  
Anodic Stripping Voltammetry ◽  
Gold Nanoclusters ◽  
Diamond Films ◽  
Stripping Voltammetry ◽  
Diamond Surface ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Anodic Stripping ◽  
Microscopy Images ◽  
Scanning Electron

In the present study, we introduce various technological approaches for fabrication of structured boron-doped diamond (BDD) electrodes, i.e., nanocones and nanorods which are used as working electrodes for electrochemical measurements. Structured BDD were realized either by reactive ion etching employing gold nanoclusters as the mask or by thermo-catalytically induced modification of the diamond surface. All samples were characterized in terms of surface morphology (scanning electron microscopy images), chemical composition (Raman spectroscopy) and electrochemical properties (anodic stripping voltammetry).

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