Electrical characterization of Al/Si ohmic contacts to heavily boron doped polycrystalline diamond films

1996 ◽  
Vol 79 (5) ◽  
pp. 2535-2541 ◽  
Author(s):  
M. Werner ◽  
C. Johnston ◽  
P. R. Chalker ◽  
S. Romani ◽  
I. M. Buckley‐Golder
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Electrical Characterization ◽  
Polycrystalline Diamond ◽  
Boron Doped

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

Optical and electrical characterization of boron-doped diamond films

1995 ◽  
Vol 4 (5-6) ◽  
pp. 678-683 ◽  
Author(s):  
R. Locher ◽  
J. Wagner ◽  
F. Fuchs ◽  
M. Maier ◽  
P. Gonon ◽  
...  
Keyword(s):  
Diamond Films ◽  
Electrical Characterization ◽  
Boron Doped Diamond ◽  
Boron Doped

Synthesis and electrical characterization of boron‐doped thin diamond films

1992 ◽  
Vol 61 (15) ◽  
pp. 1832-1834 ◽  
Author(s):  
A. Masood ◽  
M. Aslam ◽  
M. A Tamor ◽  
T. J. Potter
Keyword(s):  
Diamond Films ◽  
Electrical Characterization ◽  
Boron Doped

Investigation of the Field Emission Current from Polycrystalline Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
J. W. Glesener ◽  
A. A. Morrish
Keyword(s):  
Field Emission ◽  
Electron Tunneling ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Emission Current ◽  
Tunneling Mechanism ◽  
Boron Doped ◽  
Field Emission Current ◽  
Thermal Stability Of

AbstractThe field emission current from boron doped polycrystalline diamond films was characterized as a function of voltage and temperature. The motivation for the current-temperature measurements was to assess the thermal stability of the diamond emitters and gain some insight into a possible emission mechanism.Results from the current-temperature (I-T) measurements found that the field emission current appeared independent of temperature. The best characterization of the results implied a temperature independent electron tunneling mechanism if not electron emission from the valence band of diamond.

Very low resistivity AlSi ohmic contacts to boron-doped polycrystalline diamond films

1994 ◽  
Vol 3 (4-6) ◽  
pp. 983-985 ◽  
Author(s):  
M. Werner ◽  
O. Dorsch ◽  
H.U. Baerwind ◽  
A. Ersoy ◽  
E. Obermeier ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Low Resistivity ◽  
Boron Doped

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted
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