Electron emission from phosphorus- and boron-doped polycrystalline diamond films

1995 ◽  
Vol 31 (1) ◽  
pp. 74-75 ◽  
Author(s):  
K. Okano ◽  
K.K. Gleason
1995 ◽  
Vol 142 (12) ◽  
pp. L223-L225 ◽  
Author(s):  
Sheng‐Hsiung Chen ◽  
Shen‐Li Chen ◽  
Ming‐Hsing Tsai ◽  
J. J. Shyu ◽  
Chia‐Fu Chena

2014 ◽  
Vol 211 (10) ◽  
pp. 2238-2243 ◽  
Author(s):  
S. Elfimchev ◽  
Sh. Michaelson ◽  
R. Akhvlediani ◽  
M. Chandran ◽  
H. Kaslasi ◽  
...  

2013 ◽  
Vol 28 (5) ◽  
pp. 688-692
Author(s):  
丁明清 DING Ming-qing ◽  
李莉莉 LI Li-li ◽  
冯进军 FENG Jin-jun

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  

2005 ◽  
Vol 475-479 ◽  
pp. 3587-3590
Author(s):  
K.J. Liao ◽  
W.L. Wang ◽  
Y.T. Wang ◽  
J.W. Lu ◽  
X.L. Sun

The field electron emission from carbon nanotube films on polycrystalline diamond films was investigated. The carbon nanotubes and diamond films on Si substrates were prepared by a conventional hot filament chemical vapour deposition. The films obtained were characterized by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ion-pumped vacuum chamber at a pressure of 10-6 Pa.. The experimental results showed that the field emission behaviours of carbon nanotubes/diomond films structure have greatly been improved as compared with carbon nanotubes and diamond films, respectively. A turn-on field of 1.0 V/µm and a maximum current of 500 µA at 1.5 V/µm were observed, which were lower than those of carbon nanotubes and polycrystalline diamond films, respectively. This improvement was attributed to the tip shape of sample surface, which provided an additional local increase in electric field at the tube ends.


2010 ◽  
Vol 152-153 ◽  
pp. 413-417
Author(s):  
You Sheng Zou ◽  
Zheng Xue Li ◽  
Hao Yang

The boron-doped nanocrystalline diamond films were prepared on Si(100) substrates by microwave plasma chemical vapor deposition in gas mixture of CH4/H2/trimethylboron (TMB) with B/C ratio in the range of 0-1900ppm. The dependencies of surface morphology, microstructure, phase composition and field electron emission properties on the B/C ratio were systematically investigated by scanning electron microscope, X-ray diffractometer, visible and UV Raman spectroscopy. The results show that the diamond grains gather together forming ball-like clusters with inhomogeneous size, the doped boron atoms can promote the growth of plane (111) surface and terminate the diamond growth sites, resulting in the reduction of growth rate with the increase of B/C ratio in the gas mixture. The two peaks located at approximately 500 and 1220cm-1 resulted from Fano interference were observed in the visible Raman spectra for the heavily boron-doped nanocrystalline diamond film, and the sp2/sp3 ratio of carbon bonds increased with B/C ratio increasing in gas mixture. The field electron emission performances of the boron-doped nanocrystalline diamond films were obviously dependent on B/C ratio in the gas mixture, and boron doping can improve their field electron emission properties remarkably. The low turn-on electric field of 7.6V/μm was achieved for the boron-doped nanocrystalline diamond film deposited at B/C ratio of 1900ppm.


2001 ◽  
Vol 40 (Part 2, No. 8A) ◽  
pp. L829-L831 ◽  
Author(s):  
Takatoshi Yamada ◽  
Ken-ichi Kanda ◽  
Ken Okano ◽  
Atsuhito Sawabe

1996 ◽  
Vol 79 (5) ◽  
pp. 2535-2541 ◽  
Author(s):  
M. Werner ◽  
C. Johnston ◽  
P. R. Chalker ◽  
S. Romani ◽  
I. M. Buckley‐Golder

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